English
Home > Products
  • High Temperature Resistant Sic Boat

    • China High Temperature Resistant Sic Boat Manufacturers, Suppliers, Factory

    Semicorex has been producing High Temperature Resistant Sic Boat for many years and is one of the professional High Temperature Resistant Sic Boat manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

    Related Products

    Hot Products

    • Quartz Cleaning Tank

      Quartz Cleaning Tank

      Semicorex Quartz Cleaning Tank stands as a pinnacle in semiconductor processing, meticulously engineered to ensure the pristine purity essential for the delicate task of wafer cleaning. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Silicon Nitride Ceramic Substrate

      Silicon Nitride Ceramic Substrate

      Silicon Nitride Ceramic Substrate, is a versatile and high-performance material widely used in various technological applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC ICP Etching Plate

      SiC ICP Etching Plate

      Semicorex SiC ICP Etching Plate is an advanced and indispensable component in the semiconductor industry, designed to enhance the precision and efficiency of etching processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • 6 Inch Semi-Insulating HPSI SiC Wafer

      6 Inch Semi-Insulating HPSI SiC Wafer

      Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of silicon carbide products for many years. Our double-polished 6 Inch Semi-Insulating HPSI SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Crucibles for Crystal Growth

      Crucibles for Crystal Growth

      Semicorex Crucibles for Crystal Growth are indispensable in achieving controlled single-crystal growth, fundamental for semiconductor device manufacturing. These crucibles are meticulously designed to fulfill the rigorous standards of the semiconductor sector, ensuring peak performance and efficiency across all applications. We at Semicorex are dedicated to manufacturing and supplying high-performance Crucibles for Crystal Growth that fuse quality with cost-efficiency.
    • TaC Coated Ring

      TaC Coated Ring

      Semicorex TaC Coated Ring stands as a critical component that meets these demanding requirements. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • Related Blog
    • Reviews

    • Silicon Carbide Substrate Core Process Flow

      Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

    • Differences between SiC crystals with different structures

      Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

    • Knowing GaN

      Recently, the semiconductor industry has continued to pay increasing attention to Gallium Nitride (GaN) technology. Due to its excellent electronic properties, Gallium Nitride devices have important applications in many high-tech fields:

    • SiC Epitaxy

      There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

    • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

      In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

    • Introducing Silicon Material

      Silicon is the second most abundant element on Earth after oxygen. Most silicon is found in soil, rocks, natural water, trees, and plants.

    Send Inquiry

    Hit enter to search or ESC to close
    X
    We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
    Reject Accept