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  • Plate for Epitaxial Growth

    Plate for Epitaxial Growth

    The Semicorex Plate for Epitaxial Growth stands as a critical element specifically designed to cater to the intricacies of epitaxial processes. Customizable to meet distinct specifications and preferences, our offering delivers an individually tailored solution that seamlessly fits your unique operational needs. We offer a range of customization options, from size alterations to variations in the coating application, equipping us to engineer and supply a product capable of enhancing performance across various application scenarios. We at Semicorex are dedicated to manufacturing and supplying high-performance Plates for Epitaxial Growth that fuse quality with cost-efficiency.
  • Solid Silicon Carbide Focusing Ring

    Solid Silicon Carbide Focusing Ring

    The Semicorex Solid Silicon Carbide Focusing Ring is a pivotal component in semiconductor manufacturing, strategically positioned outside the wafer to maintain direct contact. By utilizing an applied voltage, this ring focuses the plasma traversing it, thereby enhancing the process uniformity on the wafer. Constructed solely from Chemical Vapor Deposition Silicon Carbide (CVD SiC), this focus ring embodies the exceptional qualities demanded by the semiconductor industry. We at Semicorex are dedicated to manufacturing and supplying high-performance Solid Silicon Carbide Focusing Ring that fuse quality with cost-efficiency.
  • CVD SiC Shower head

    CVD SiC Shower head

    Semicorex CVD SiC Shower Head is a core component used in semiconductor etching equipment, serving as both an electrode and a conduit for etching gases. Choose Semicorex for its superior material control, advanced processing technology, and reliable, long-lasting performance in demanding semiconductor applications.*
  • Alumina Ceramic Vacuum Chuck

    Alumina Ceramic Vacuum Chuck

    Semicorex Alumina Ceramic Vacuum Chuck is applied in the wafer thinning and grinding processes of semiconductor manufacturing, serving as an indispensable tool for achieving high-precision and reliable semiconductor production.**
  • SiC Grinding Media

    SiC Grinding Media

    Semicorex SiC Grinding Media is crafted from silicon carbide ceramic, a material celebrated for its exceptional hardness and durability. Engineered to meet the rigorous demands of various industrial applications, SiC Grinding Media offers unparalleled efficiency and longevity.
  • SiC wafer Grinding Plate

    SiC wafer Grinding Plate

    Advanced SiC wafer grinding plate from Semicorex is the precision machining part for achieving ultra-high flatness on semiconductor wafer surfaces. Selecting Semicorex SiC wafer grinding plate goes beyond selecting a high-performance tool, it secures the optimal, accurate, stable and efficient solution for wafer grinding applications.
  • Related Blog
  • Reviews

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • Different types of SiC ceramics

    Silicon carbide (SiC) ceramic is a type of advanced ceramic material known for its exceptional properties and wide range of applications. It is composed of silicon (Si) and carbon (C) atoms arranged in a crystal lattice structure, resulting in a hard and strong material with excellent thermal and electrical conductivity.

  • 3 methods of graphite molding

    The four main molding methods for graphite molding are: extrusion molding, molding, vibratory molding and isostatic molding. Most of the common carbon/graphite materials on the market are molded by hot extrusion and molding (cold or hot), and isostatic molding is a method with leading molding performance. Vibration molding is generally used to manufacture medium and coarse structural graphite, particle size between 0.5-2mm particle size, generally dominated by di-roasted graphitized products, density between 1.55-1.75kg/m³, coarser particles, rougher surface, can not be used for precision machining. It is mainly used in chemical industry and metal smelting.

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • What is the Difference Between Epitaxial and Diffused Wafers

    Both epitaxial and diffused wafers are essential materials in semiconductor manufacturing, but they differ significantly in their fabrication processes and target applications. This article delves into the key distinctions between these wafer types.

  • Isostatic Graphite Production Technology

    Isostatic pressing technology is a critical process in the manufacturing of isostatic graphite, largely determining the performance of the final product. As such, comprehensive research and optimization of isostatic graphite production remain essential focal points in the industry.

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