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Graphite Gaskets, Our company adheres to the spirit of "lower costs, higher quality, and making more benefits for our clients". Employing talents from the same line and adhering to the principle of "honesty, good faith, real thing and sincerity", our company hopes to gain common development with clients from both at home and abroad!

Hot Products

SiC-Coated Barrel Susceptor
With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Barrel Susceptor is the perfect choice for use in single crystal growth applications. Its silicon carbide coating provides exceptional flatness and heat distribution properties, ensuring reliable and consistent performance in even the most demanding high-temperature environments.
SiC Coated Graphite Barrel Susceptor
If you're looking for a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex SiC Coated Graphite Barrel Susceptor is the ideal choice. Its exceptional thermal conductivity and heat distribution properties make it the go-to choice for reliable and consistent performance in high-temperature and corrosive environments.
ICP Silicon Carbon Coated Graphite
Semicorex's ICP Silicon Carbon Coated Graphite is the ideal choice for demanding wafer handling and thin film deposition processes. Our product boasts superior heat and corrosion resistance, even thermal uniformity, and optimal laminar gas flow patterns.
SiC Coated MOCVD Susceptor
Semicorex is a leading manufacturer and supplier of SiC Coated MOCVD Susceptor. Our product is specially designed for semiconductor industries to grow the epitaxial layer on the wafer chip. The high purity Silicon Carbide coated graphite carrier is used as the center plate in MOCVD, with a gear or ring-shaped design. Our susceptor is widely used in MOCVD equipment, ensuring high heat and corrosion resistance, and great stability in extreme environments.
SiC Multi Pocket Susceptor
Semicorex SiC Multi Pocket Susceptor represents a critical enabling technology in the epitaxial growth of high-quality semiconductor wafers. Fabricated through a sophisticated Chemical Vapor Deposition (CVD) process, these susceptors provide a robust and high-performance platform for achieving exceptional epitaxial layer uniformity and process efficiency.**
MOCVD Epitaxy Susceptor
Semicorex MOCVD Epitaxy Susceptor has emerged as a critical component in Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxy, enabling the fabrication of high-performance semiconductor devices with exceptional efficiency and precision. Its unique combination of material properties makes it perfectly suited for the demanding thermal and chemical environments encountered during epitaxial growth of compound semiconductors.**

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CVD process for SiC wafer epitaxy
The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).
Why choose liquid phase epitaxy method?
Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:
Why Choose Pressureless Sintering for SiC Ceramic Preparation?
The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.
Why Is There Increasing Demand for High-Thermal Conductivity SiC Ceramics in the Semiconductor Industry?
Currently, silicon carbide (SiC) is a highly active area of research in thermal conductive ceramic materials both domestically and internationally.
Introducing Silicon Material
Silicon is the second most abundant element on Earth after oxygen. Most silicon is found in soil, rocks, natural water, trees, and plants.
Final polishing of the silicon wafer surface
To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

China Graphite Gaskets Manufacturers, Suppliers, Factory

Related Products

Hot Products

SiC-Coated Barrel Susceptor

SiC Coated Graphite Barrel Susceptor

ICP Silicon Carbon Coated Graphite

SiC Coated MOCVD Susceptor

SiC Multi Pocket Susceptor

MOCVD Epitaxy Susceptor

CVD process for SiC wafer epitaxy

Why choose liquid phase epitaxy method?

Why Choose Pressureless Sintering for SiC Ceramic Preparation?

Why Is There Increasing Demand for High-Thermal Conductivity SiC Ceramics in the Semiconductor Industry?

Introducing Silicon Material

Final polishing of the silicon wafer surface

Diego 2024-01-06 22:35:59

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Ruth 2024-02-17 10:17:20

Nana 2023-03-16 21:41:21

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Hedda 2023-07-06 13:41:38

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