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  • Gas Injection System For MOCVD

    • China Gas Injection System For MOCVD Manufacturers, Suppliers, Factory

    Semicorex has been producing Gas Injection System For MOCVD for many years and is one of the professional Gas Injection System For MOCVD manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • CVD TaC Coating Cover

      CVD TaC Coating Cover

      Semicorex CVD TaC Coating Cover has been becoming a critical enabling technology in the demanding environments within epitaxy reactors, characterized by high temperatures, reactive gases, and stringent purity requirements, necessitate robust materials to ensure consistent crystal growth and prevent unwanted reactions.**
    • SiC Coated Graphite Barrel Susceptor

      SiC Coated Graphite Barrel Susceptor

      If you're looking for a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex SiC Coated Graphite Barrel Susceptor is the ideal choice. Its exceptional thermal conductivity and heat distribution properties make it the go-to choice for reliable and consistent performance in high-temperature and corrosive environments.
    • Semiconductor Wafer Carrier for MOCVD Equipment

      Semiconductor Wafer Carrier for MOCVD Equipment

      You can rest assured to buy Semiconductor Wafer Carrier for MOCVD Equipment from our factory. Semiconductor wafer carriers are an essential component of MOCVD equipment. They are used to transport and protect semiconductor wafers during the manufacturing process. Semiconductor Wafer Carriers for MOCVD Equipment are made of high-purity materials and are designed to maintain the integrity of the wafers during processing.
    • TaC Coated Wafer Susceptor

      TaC Coated Wafer Susceptor

      Semicorex TaC Coated Wafer Susceptor is a crucial component used in Metal-Organic Chemical Vapor Deposition (MOCVD) furnaces for semiconductor epitaxial (epi) processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC End Effector

      SiC End Effector

      Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC End Effector has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • SiC ALD Susceptor

      SiC ALD Susceptor

      Semicorex SiC ALD Susceptor offers numerous advantages in ALD processes, including high-temperature stability, enhanced film uniformity and quality, improved process efficiency, and extended susceptor lifetime. These benefits make the SiC ALD Susceptor a valuable tool for achieving high-performance thin films in various demanding applications.**
    • Related Blog
    • Reviews

    • TaC Coating

      According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

    • Why choose SiC-coated graphite susceptors?

      Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

    • The Fatal Flaw of GaN

      ​As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN hailed as the next major semiconductor material, why is the lack of P-type GaN devices a critical drawback, and what does this mean for future designs?

    • Infineon Unveils World’s First 300mm Power GaN Wafer

      Recently, Infineon Technologies announced the successful development of the world’s first 300mm power Gallium Nitride (GaN) wafer technology.

    • What is CMP Process

      In semiconductor manufacturing, atomic-level flatness is usually used to describe the global flatness of the wafer, with the unit of nanometers (nm).

    • SiC Epitaxy

      There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

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