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Etching equipment, We're sticking to excellent quality, competitive price and punctual delivery and better service, and sincerely hope to establish long-term good relationships and cooperation with our new and old business partners from all over the world. Sincerely welcome you to join us.

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  • SiC Process Tube

    SiC Process Tube

    SiC Process Tube is a tube shape reactor in heat treatment for wafer processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Wafer

    Silicon Wafer

    Semicorex silicon wafer is a thin, circular slice of silicon crystal used in the fabrication of integrated circuits and other microdevices. Typically, these wafers are produced through a meticulous process involving growing a single crystal ingot of high-purity silicon and then precisely slicing it into thin discs. Silicon wafers serve as the fundamental substrate upon which semiconductor devices are built. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Diffusion Tube

    Diffusion Tube

    Semicorex cutting-edge Diffusion Tube, crafted from high-quality semiconductor grade quartz—a pinnacle in semiconductor processing technology. Engineered to precision, this indispensable component redefines the standards of diffusion processes in the semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Sapphire Crystal Growth Heater

    Sapphire Crystal Growth Heater

    Enhance your capacity for precision thermal management with the Semicorex Sapphire Crystal Growth Heater. This heater, meticulously designed for optimal performance, boasts a SiC layer integration that solidifies its role as a superior element in crystal growth operations, promoting both high efficiency and dependability.We at Semicorex are dedicated to manufacturing and supplying high-performance Sapphire Crystal Growth Heater that fuse quality with cost-efficiency.
  • Isostatic Graphite Crucible

    Isostatic Graphite Crucible

    Semicorex Isostatic Graphite Crucible is a specialized vessel used in the thermal processing of semiconductor materials, particularly in the production of monocrystals. It plays a crucial role in the controlled growth of single-crystal structures essential for semiconductor device fabrication. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CVD SiC Showerhead

    CVD SiC Showerhead

    Semicorex CVD SiC Showerhead is an essential component in modern CVD processes for achieving high-quality, uniform thin films with improved efficiency and throughput. The CVD SiC Showerhead's superior gas flow control, contribution to film quality, and long lifespan make it indispensable for demanding semiconductor manufacturing applications.**
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  • AlN crystal growth by PVT method

    The third generation of wide bandgap semiconductor materials, including gallium nitride (GaN), silicon carbide (SiC), and aluminum nitride (AlN), exhibit excellent electrical, thermal, and acousto-optical properties. These materials address the limitations of the first and second generation of semiconductor materials, significantly advancing the semiconductor industry.

  • Why Choose Pressureless Sintering for SiC Ceramic Preparation?

    The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

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    The recent announcement of the 2024 Nobel Prize in Physics has brought unprecedented attention to the field of artificial intelligence.

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