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    • China Ceramic Wafer Carrier Box Manufacturers, Suppliers, Factory

    Semicorex has been producing Ceramic Wafer Carrier Box for many years and is one of the professional Ceramic Wafer Carrier Box manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • SiC-Coated ICP Component

      SiC-Coated ICP Component

      Semicorex's SiC-Coated ICP Component is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a fine SiC crystal coating, our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance.
    • AIN Substrate

      AIN Substrate

      Semicorex’s AIN Substrate excels in superior thermal management and electrical isolation, providing a robust solution crafted from high-purity AlN ceramics. This white ceramic material is lauded for its comprehensive properties.**
    • SiC Vacuum Chuck

      SiC Vacuum Chuck

      Semicorex SiC Vacuum Chuck represents a pinnacle of precision engineering tailored for the demanding semiconductor industry. Crafted from graphite substrates and enhanced through state-of-the-art Chemical Vapor Deposition (CVD) techniques, this innovative device seamlessly integrates the unparalleled properties of Silicon Carbide (SiC) coating. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Graphite Susceptor with SiC Coating

      Graphite Susceptor with SiC Coating

      Semicorex Graphite Susceptor with SiC Coating is an essential component designed for silicon epitaxy processes in Applied Materials and LPE (Liquid Phase Epitaxy) units. Crafted from high-quality graphite material coated with Silicon Carbide (SiC), this susceptor ensures superior performance and longevity in semiconductor manufacturing environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Silicon Carbide Seal Ring

      Silicon Carbide Seal Ring

      Semicorex Silicon Carbide Seal Ring has emerged as a critical enabling technology within the semiconductor industry, offering unparalleled performance and reliability in the face of increasingly demanding process conditions. Their unique combination of material properties makes it ideal for a wide range of applications, ensuring optimal equipment uptime, extended component lifecycles, and ultimately, lower total cost of ownership. We at Semicorex are dedicated to manufacturing and supplying high-performance Silicon Carbide Seal Ring that fuses quality with cost-efficiency.**
    • TaC Coating Jig

      TaC Coating Jig

      Semicorex TaC Coating Jig stands as a pivotal component within the semiconductor manufacturing process, crafted meticulously from graphite and fortified with a resilient layer of tantalum carbide coating. This crucial equipment element embodies a fusion of cutting-edge materials science and precision engineering, designed to uphold stringent operational demands and exacting standards prevalent in semiconductor fabrication. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Substrate Cutting and Grinding Process

      SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

    • Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

      Etching Process: Silicon vs. Silicon Carbide

    • Silicon Carbide(SiC) Crystal Growth Furnace

      Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

    • What is a TaC coating on graphite?

      In the rapidly evolving field of semiconductor manufacturing, even the smallest improvements can make a big difference when it comes to achieving optimal performance, durability, and efficiency. One advancement that is generating a lot of buzz in the industry is the use of TaC (Tantalum Carbide) coating on graphite surfaces. But what exactly is TaC coating, and why are semiconductor manufacturers taking notice of it?

    • Monocrystalline Silicon Manufacturing

      The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.

    • Difficulties in GaN preparation

      As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

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