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China carbon felt Manufacturers, Suppliers, Factory

Semicorex has been producing carbon felt for many years and is one of the professional carbon felt manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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  • SiC MOCVD Inner Segment

    SiC MOCVD Inner Segment

    Semicorex SiC MOCVD Inner Segment is an essential consumable for metal-organic chemical vapor deposition (MOCVD) systems used in the production of silicon carbide (SiC) epitaxial wafers. It's precisely designed to withstand the demanding conditions of SiC epitaxy, ensuring optimal process performance and high-quality SiC epilayers.**
  • Ion Implantation Parts

    Ion Implantation Parts

    The Semicorex Ion Implantation Parts made of high-purity graphite components are engineered to meet the rigorous demands of semiconductor manufacturing, specifically for use in ion implantation equipment. These components boast several critical advantages that make them ideal for high-performance applications. We at Semicorex are dedicated to manufacturing and supplying high-performance Ion Implantation Parts that fuse quality with cost-efficiency.
  • Aluminum Nitride Ceramic Chuck

    Aluminum Nitride Ceramic Chuck

    Semicorex Aluminum Nitride Ceramic Chuck represents a cutting-edge solution for semiconductor wafer processing, specifically designed to securely hold wafers in place during various stages of manufacturing. Functioning as an electrostatic chuck (ESC), this innovative device leverages the exceptional properties of aluminum nitride ceramic to ensure precise and reliable wafer retention. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Diffusion Boat

    SiC Diffusion Boat

    With high-quality material properties, Semicorex SiC Diffusion Boat represents optimal functionality across a broad spectrum of operational parameters: hardness, resilience, and thermal and chemical resistance, etc. This material choice is crucial in reducing contamination risks, protecting wafers, and enduring the demanding conditions present in semiconductor fabrication processes.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Diffusion Boat that fuse quality with cost-efficiency.**
  • TaC Coating Upper Halfmoon

    TaC Coating Upper Halfmoon

    Semicorex TaC Coating Upper Halfmoon is a specialized component engineered for high-performance epitaxial processes in semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Sealing Part

    SiC Sealing Part

    Semicorex SiC Sealing Part offers a blend of exceptional hardness, chemical resistance, and thermal stability, making it significant for demanding industrial applications. The advanced characteristics of SiC Sealing Part ensure durability, reliability, and efficiency, thereby enhancing the performance and longevity of the components.**
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  • Photovoltaic Industry Development Overview

    By 2027, solar photovoltaic (PV) will overtake coal as the world's largest installed capacity. The cumulative installed capacity of solar PV nearly triples in our forecast, growing by nearly 1,500 gigawatts over this period, and will surpass natural gas by 2026 and coal by 2027.

  • Synthesizing High-Purity Silicon Carbide Powder

    High-Purity Silicon Carbide Powder features exceptional wide bandgap characteristics, which make it an ideal material for manufacturing high-frequency, high-power electronic devices.

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • Tantalum carbide coatings in semiconductor industry

    The development of high-powered blue and UV LEDs has enabled the creation of full-color LED TV displays, as well as white LED automotive and domestic lighting. These LEDs are based on Gallium Nitride, which is deposited on substrate wafers supported by CVD SiC-coated graphite susceptor using the MOCVD process.

  • Substrate Cutting and Grinding Process

    SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

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