SiC coating is a thin layer onto the susceptor through the chemical vapor deposition(CVD) process. Silicon carbide material provides a number of advantages over silicon, including 10x the breakdown electric field strength, 3x the band gap, which provides the material with high temperature and chemical resistance, excellent wear resistance as well as thermal conductivity.
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SiC coating possesses several unique advantages
High Temperature Resistance: CVD SiC coated susceptor can withstand high temperatures up to 1600°C without undergoing significant thermal degradation.
Chemical Resistance: The silicon carbide coating provides excellent resistance to a wide range of chemicals, including acids, alkalis, and organic solvents.
Wear Resistance: The SiC coating provides the material with excellent wear resistance, making it suitable for applications that involve high wear and tear.
Thermal Conductivity: The CVD SiC coating provides the material with high thermal conductivity, making it suitable for use in high-temperature applications that require efficient heat transfer.
High Strength and Stiffness: The silicon carbide coated susceptor provides the material with high strength and stiffness, making it suitable for applications that require high mechanical strength.
SiC coating is used in various applications
LED Manufacturing: CVD SiC coated susceptor is used in manufacturing processed of various LED types, including blue and green LED, UV LED and deep-UV LED, due to its high thermal conductivity and chemical resistance.
Mobile communication: CVD SiC coated susceptor is a crucial part of the HEMT to complete the GaN-on-SiC epitaxial process.
Semiconductor Processing: CVD SiC coated susceptor is used in the semiconductor industry for various applications, including wafer processing and epitaxial growth.
SiC coated graphite components
Made by Silicon Carbide Coating (SiC) graphite, the coating is applied by a CVD method to specific grades of high density graphite, so it can operate in the high temperature furnace with over 3000 °C in an inert atmosphere, 2200°C in vacuum.
The special properties and low mass of the material allow fast heating rates, uniform temperature distribution and outstanding precision in control.
Material data of Semicorex SiC Coating
Typical properties |
Units |
Values |
Structure |
|
FCC β phase |
Orientation |
Fraction (%) |
111 preferred |
Bulk density |
g/cm³ |
3.21 |
Hardness |
Vickers hardness |
2500 |
Heat Capacity |
J·kg-1 ·K-1 |
640 |
Thermal expansion 100–600 °C (212–1112 °F) |
10-6K-1 |
4.5 |
Young’ s Modulus |
Gpa (4pt bend, 1300℃) |
430 |
Grain Size |
μm |
2~10 |
Sublimation Temperature |
℃ |
2700 |
Felexural Strength |
MPa (RT 4-point) |
415 |
Thermal conductivity |
(W/mK) |
300 |
Conclusion CVD SiC coated susceptor is a composite material that combines the properties of a susceptor and silicon carbide. This material possesses unique properties, including high temperature and chemical resistance, excellent wear resistance, high thermal conductivity, and high strength and stiffness. These properties make it an attractive material for various high-temperature applications, including semiconductor processing, chemical processing, heat treatment, solar cell manufacturing, and LED manufacturing.
Semicorex is a reputable supplier and manufacturer of SiC Coated MOCVD Graphite Satellite Platform. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
Read MoreSend InquirySemicorex is a renowned manufacturer and supplier of high-quality MOCVD Cover Star Disc Plate for Wafer Epitaxy. Our product is specially designed to cater to the needs of the semiconductor industry, particularly in growing the epitaxial layer on the wafer chip. Our susceptor is used as the center plate in MOCVD, with a gear or ring-shaped design. The product is highly resistant to high heat and corrosion, making it ideal for use in extreme environments.
Read MoreSend InquirySemicorex is a leading supplier and manufacturer of MOCVD Susceptor for Epitaxial Growth. Our product is widely used in semiconductor industries, particularly in the growth of the epitaxial layer on the wafer chip. Our susceptor is designed to be used as the center plate in MOCVD, with a gear or ring-shaped design. The product has high heat and corrosion resistance, making it stable in extreme environments.
Read MoreSend InquirySemicorex is a leading manufacturer and supplier of SiC Coated MOCVD Susceptor. Our product is specially designed for semiconductor industries to grow the epitaxial layer on the wafer chip. The high purity Silicon Carbide coated graphite carrier is used as the center plate in MOCVD, with a gear or ring-shaped design. Our susceptor is widely used in MOCVD equipment, ensuring high heat and corrosion resistance, and great stability in extreme environments.
Read MoreSend InquirySemicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC Coated Graphite Susceptor for MOCVD has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
Read MoreSend InquirySemicorex's RTP Graphite Carrier Plate is the perfect solution for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Our product is designed to offer superior heat resistance and thermal uniformity, ensuring that the epitaxy susceptors are subjected to the deposition environment, with high heat and corrosion resistance.
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