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China Silicon Carbide Coated Manufacturers, Suppliers, Factory

SiC coating is a thin layer onto the susceptor through the chemical vapor deposition(CVD) process. Silicon carbide material provides a number of advantages over silicon, including 10x the breakdown electric field strength, 3x the band gap, which provides the material with high temperature and chemical resistance, excellent wear resistance as well as thermal conductivity.

Semicorex provides customized service, help you innovate with components that last longer, reduce cycle times, and improve yields.


SiC coating possesses several unique advantages

High Temperature Resistance: CVD SiC coated susceptor can withstand high temperatures up to 1600°C without undergoing significant thermal degradation.

Chemical Resistance: The silicon carbide coating provides excellent resistance to a wide range of chemicals, including acids, alkalis, and organic solvents.

Wear Resistance: The SiC coating provides the material with excellent wear resistance, making it suitable for applications that involve high wear and tear.

Thermal Conductivity: The CVD SiC coating provides the material with high thermal conductivity, making it suitable for use in high-temperature applications that require efficient heat transfer.

High Strength and Stiffness: The silicon carbide coated susceptor provides the material with high strength and stiffness, making it suitable for applications that require high mechanical strength.


SiC coating is used in various applications

LED Manufacturing: CVD SiC coated susceptor is used in manufacturing processed of various LED types, including blue and green LED, UV LED and deep-UV LED, due to its high thermal conductivity and chemical resistance.



Mobile communication: CVD SiC coated susceptor is a crucial part of the HEMT to complete the GaN-on-SiC epitaxial process.



Semiconductor Processing: CVD SiC coated susceptor is used in the semiconductor industry for various applications, including wafer processing and epitaxial growth.





SiC coated graphite components

Made by Silicon Carbide Coating (SiC) graphite, the coating is applied by a CVD method to specific grades of high density graphite, so it can operate in the high temperature furnace with over 3000 °C in an inert atmosphere, 2200°C in vacuum.

The special properties and low mass of the material allow fast heating rates, uniform temperature distribution and outstanding precision in control.


Material data of Semicorex SiC Coating

Typical properties

Units

Values

Structure


FCC β phase

Orientation

Fraction (%)

111 preferred

Bulk density

g/cm³

3.21

Hardness

Vickers hardness

2500

Heat Capacity

J·kg-1 ·K-1

640

Thermal expansion 100–600 °C (212–1112 °F)

10-6K-1

4.5

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Grain Size

μm

2~10

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Thermal conductivity

(W/mK)

300


Conclusion CVD SiC coated susceptor is a composite material that combines the properties of a susceptor and silicon carbide. This material possesses unique properties, including high temperature and chemical resistance, excellent wear resistance, high thermal conductivity, and high strength and stiffness. These properties make it an attractive material for various high-temperature applications, including semiconductor processing, chemical processing, heat treatment, solar cell manufacturing, and LED manufacturing.






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MOCVD Susceptor for Epitaxial Growth

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Semicorex is a leading supplier and manufacturer of MOCVD Susceptor for Epitaxial Growth. Our product is widely used in semiconductor industries, particularly in the growth of the epitaxial layer on the wafer chip. Our susceptor is designed to be used as the center plate in MOCVD, with a gear or ring-shaped design. The product has high heat and corrosion resistance, making it stable in extreme environments.

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SiC Coated MOCVD Susceptor

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Semicorex is a leading manufacturer and supplier of SiC Coated MOCVD Susceptor. Our product is specially designed for semiconductor industries to grow the epitaxial layer on the wafer chip. The high purity Silicon Carbide coated graphite carrier is used as the center plate in MOCVD, with a gear or ring-shaped design. Our susceptor is widely used in MOCVD equipment, ensuring high heat and corrosion resistance, and great stability in extreme environments.

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SiC Coated Graphite Susceptor for MOCVD

SiC Coated Graphite Susceptor for MOCVD

Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC Coated Graphite Susceptor for MOCVD has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.

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Semicorex's RTP Graphite Carrier Plate is the perfect solution for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Our product is designed to offer superior heat resistance and thermal uniformity, ensuring that the epitaxy susceptors are subjected to the deposition environment, with high heat and corrosion resistance.

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Semicorex has been producing Silicon Carbide Coated for many years and is one of the professional Silicon Carbide Coated manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.
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