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It is a good way to improve our products and service. Our mission is to develop creative products to customers with a good experience for Wafer Process Heater,LPE Susceptor,LPE Susceptor Wafer,Barrel Susceptors for LPE,Polygonal Susceptor, As a key enterprise of this industry, our corporation makes endeavours to become a leading supplier, dependant on the faith of expert quality & all over the world provider.
Wafer Process Heater, We pay high attention to customer service, and cherish every customer. Now we have maintained a strong reputation in the industry for many years. We are honest and work on building a long-term relationship with our customers.

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    SiC Coated Wafer Heater

    Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our SiC Coated Wafer Heater has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Ceramic Axle Sleeve

    Ceramic Axle Sleeve

    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Ceramic Axle Sleeve has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Tantalum Carbide Coated Plate

    TaC Tantalum Carbide Coated Plate

    Semicorex TaC Tantalum Carbide Coated Plate is a cutting-edge solution designed to meet the stringent demands of semiconductor manufacturing, particularly in the epitaxial (epi) processing stage. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Carbide Seal Ring

    Silicon Carbide Seal Ring

    Semicorex Silicon Carbide Seal Ring has emerged as a critical enabling technology within the semiconductor industry, offering unparalleled performance and reliability in the face of increasingly demanding process conditions. Their unique combination of material properties makes it ideal for a wide range of applications, ensuring optimal equipment uptime, extended component lifecycles, and ultimately, lower total cost of ownership. We at Semicorex are dedicated to manufacturing and supplying high-performance Silicon Carbide Seal Ring that fuses quality with cost-efficiency.**
  • Silicon Boats

    Silicon Boats

    Semicorex Silicon Boats are high-purity silicon carriers designed for crystal growth, semiconductor, and photovoltaic manufacturing processes, providing exceptional thermal stability and contamination control. Choosing Semicorex means accessing precision-engineered boats made under strict quality control to ensure consistent performance in the most demanding environments.*
  • Monocrystalline silicon planar target

    Monocrystalline silicon planar target

    Monocrystalline silicon planar target from Semicorex is a crucial component in cutting-edge semiconductor manufacturing industry. Manufactured by top-quality monocrystalline silicon material, it features a highly ordered crystal structure and remarkable purity. These properties make it an ideal solution for manufacturing reliable, high-performance semiconductor films and optical films.
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  • Semicorex Announces 8-Inch SiC Epitaxial Wafer

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • Core Material for SiC Growth: Tantalum Carbide Coating

    The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

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    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

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  • Nearly $840 Million: Onsemi Acquires a SiC Company

    Today, Onsemi announced on its official website that it has reached an agreement with Qorvo to acquire the SiC JFET technology business and Qorvo's subsidiary.

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