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    • China wafer cleaning methods Manufacturers, Suppliers, Factory

    Semicorex has been producing wafer cleaning methods for many years and is one of the professional wafer cleaning methods manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • N-type Silicon Carbide Powder

      N-type Silicon Carbide Powder

      Semicorex N-type Silicon Carbide powder (SiC) is a high-purity, doped SiC material specifically designed for advanced crystal growth applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Single-crystal Silicon Epi Susceptor

      Single-crystal Silicon Epi Susceptor

      The Single-crystal Silicon Epi Susceptor is an essential component designed for Si-GaN epitaxy processes, which can be tailored to individualized specifications and preferences, providing a bespoke solution that aligns perfectly with specific requirements. Whether it entails modifications in dimensions or adjustments in coating thickness, we possess the capability to design and deliver a product that accommodates diverse process parameters, thereby optimizing performance for targeted applications. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
    • LPE SiC-Epi Halfmoon

      LPE SiC-Epi Halfmoon

      Semicorex LPE SiC-Epi Halfmoon is an indispensable asset in the world of epitaxy, providing a robust solution to the challenges posed by high temperatures, reactive gases, and stringent purity requirements.**
    • TaC Coated Chuck

      TaC Coated Chuck

      Semicorex TaC coated chuck represents a significant advancement in the field of semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • Tantalum Carbide Crucible

      Tantalum Carbide Crucible

      Semicorex Tantalum Carbide Crucible is a crucial component in the semiconductor industry, specifically designed for the growth of Silicon Carbide (SiC) crystals. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • Diffusion Tube

      Diffusion Tube

      Semicorex cutting-edge Diffusion Tube, crafted from high-quality semiconductor grade quartz—a pinnacle in semiconductor processing technology. Engineered to precision, this indispensable component redefines the standards of diffusion processes in the semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Porous Graphite for SiC Crystal Growth

      Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

    • What is CVD process in semiconductor?

      Chemical vapor deposition CVD refers to the introduction of two or more gaseous raw materials into a reaction chamber under vacuum and high temperature conditions, where the gaseous raw materials react with each other to form a new material, which is deposited on the wafer surface.

    • Substrate and Epitaxy

      In the process of wafer preparation, there are two core links: one is the preparation of the substrate, and the other is the implementation of the epitaxial process. The substrate, a wafer carefully made of semiconductor single crystal material, can be directly put into the wafer manufacturing process as a basis to produce semiconductor devices, or further enhance the performance through the epitaxial process.

    • Advantages of SiC in EV industry

      As a wide-bandgap (WBG) semiconductor material, SiC's wider energy difference gives it higher thermal and electronic properties compared to traditional Si. This feature enables power devices to operate at higher temperatures, frequencies and voltages.

    • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

      The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

    • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

      Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

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