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With this motto in mind, we now have turn out to be amongst quite possibly the most technologically innovative, cost-efficient, and price-competitive manufacturers for vacuum sealing,reaction bonded silicon carbide,sintered silicon carbide properties,recrystallized sic,carbide ceramic, We have been keeping chasing WIN-WIN problem with our purchasers. We warmly welcome consumers from everywhere in the planet coming in excess of for a visit and establishing long-term connection.
vacuum sealing, Customer's satisfaction is always our quest, creating value for customers is always our duty, a long term mutual-beneficial business relationship is what we're doing for. We have been an absolutely reliable partner for you personally in China. Of course, other services, like consulting, can be offered too.

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  • Si3N4 Sleeve

    Si3N4 Sleeve

    Si3N4 Sleeve by Semicorex is a versatile and high-performance material that offers a unique combination of low density, superior hardness, excellent wear resistance, and exceptional thermal and chemical stability.**
  • TaC Plate

    TaC Plate

    Semicorex TaC Plate is a high-performance, TaC-coated graphite component designed for use in SiC epitaxy growth processes. Choose Semicorex for its expertise in manufacturing reliable, high-quality materials that optimize the performance and longevity of your semiconductor production equipment.*
  • Silicon Substrate

    Silicon Substrate

    Semicorex Silicon substrate, serves as the canvas upon which intricate electronic circuits are crafted. Derived from silicon, one of the most abundant elements in the Earth's crust, this crystalline substrate forms the fundamental material for manufacturing semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Coated Barrel Susceptor for Epitaxial Growth

    SiC Coated Barrel Susceptor for Epitaxial Growth

    With its superior density and thermal conductivity, the Semicorex SiC Coated Barrel Susceptor for Epitaxial Growth is the ideal choice for use in high-temperature and corrosive environments. Coated with high-purity SiC, this graphite product provides excellent protection and heat distribution, ensuring reliable and consistent performance in semiconductor manufacturing applications.
  • MOCVD Vacuum Chamber Lid

    MOCVD Vacuum Chamber Lid

    MOCVD Vacuum Chamber Lid used in crystal growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex Silicon Carbide Coated MOCVD Vacuum Chamber Lid engineered specifically stand up to these challenging environments. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • CVD Chemical Vapor Deposition Furnaces

    CVD Chemical Vapor Deposition Furnaces

    Semicorex CVD Chemical Vapor Deposition furnaces make the manufacture of high-quality epitaxy more efficient. We provide custom furnace solutions. Our CVD Chemical Vapor Deposition furnaces have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
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    This paper provides a comprehensive overview of the various manufacturing techniques employed to produce dense SiC ceramics, highlighting their unique characteristics and applications.

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    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

  • Method for preparing SiC powder

    Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

  • PECVD Process

    Plasma Enhanced Chemical Vapor Deposition (PECVD) is a widely used technology in chip manufacturing. It utilizes the kinetic energy of electrons within plasma to activate chemical reactions in the gas phase, thereby achieving thin-film deposition.

  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

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