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  • Porous Ceramic Vacuum Chuck

    Porous Ceramic Vacuum Chuck

    Semicorex Porous Ceramic Vacuum Chuck's primary function lies in its ability to provide uniform air and water permeability, a feature that ensures the even distribution of stress and robust adhesion of silicon wafers. This characteristic is crucial during the grinding process, as it prevents the wafer from slipping, thereby maintaining the integrity of the operation.**
  • SiC Robot Arm

    SiC Robot Arm

    Semicorex SiC Robot Arm is a high-performance silicon carbide ceramic robotic arm designed for precision and durability in semiconductor manufacturing processes. Choose Semicorex for our expertise in delivering innovative, reliable, and high-quality solutions tailored to the semiconductor industry's needs.*
  • RTP Carrier for MOCVD Epitaxial Growth

    RTP Carrier for MOCVD Epitaxial Growth

    Semicorex RTP Carrier for MOCVD Epitaxial Growth is ideal for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Carbon graphite susceptors and quartz crucibles are processed by MOCVD on the surface of graphite, ceramics, etc. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Alumina Ceramic Flanges

    Alumina Ceramic Flanges

    Alumina Ceramic Flanges are engineered components that offer substantial benefits, particularly in settings where thermal stability, weight considerations, and corrosion resistance are of paramount importance. These flanges are not only durable and reliable but also contribute to the overall efficiency and cost-effectiveness of the systems in which they are employed. Their unique properties make them an excellent choice for advanced engineering solutions in various industrial sectors.We at Semicorex are dedicated to manufacturing and supplying high-performance Alumina Ceramic Flanges that fuse quality with cost-efficiency.**
  • Vacuum Chuck

    Vacuum Chuck

    Semicorex Vacuum Chuck is a high-performance component designed for secure and precise wafer handling in semiconductor manufacturing. Choose Semicorex for our advanced, durable, and contamination-resistant solutions that ensure optimal performance in even the most demanding processes.*
  • Porous Carbon

    Porous Carbon

    Semicorex porous carbon, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of single crystal SiC growth. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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    By 2027, solar photovoltaic (PV) will overtake coal as the world's largest installed capacity. The cumulative installed capacity of solar PV nearly triples in our forecast, growing by nearly 1,500 gigawatts over this period, and will surpass natural gas by 2026 and coal by 2027.

  • What is a SiC Boat, and What are its Various Manufacturing Processes?

    A SiC boat, short for silicon carbide boat, is a high-temperature-resistant accessory used in furnace tubes to carry wafers during high-temperature processing. Due to the outstanding properties of silicon carbide such as resistance to high temperatures, chemical corrosion, and excellent thermal stability, SiC boats are extensively utilized in various thermal treatment processes including diffusion, oxidation, Chemical Vapor Deposition (CVD), and annealing.

  • The Fatal Flaw of GaN

    ​As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN hailed as the next major semiconductor material, why is the lack of P-type GaN devices a critical drawback, and what does this mean for future designs?

  • Begin Production of 3C-SiC Wafer

    The thermal conductivity of bulk 3C-SiC, recently measured, is the second-highest among inch-scale large crystals, ranking just below diamond. Silicon carbide (SiC) is a wide bandgap semiconductor extensively used in electronic applications, and it exists in various crystalline forms known as polytypes. Managing high localized heat flux is a significant challenge in power electronics, as it can lead to device overheating and long-term performance and reliability issues.

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

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