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  • Thin Film Deposition Sic Boats

    • China Thin Film Deposition Sic Boats Manufacturers, Suppliers, Factory

    Semicorex has been producing Thin Film Deposition Sic Boats for many years and is one of the professional Thin Film Deposition Sic Boats manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • SOI Wafer Silicon On Insulator

      SOI Wafer Silicon On Insulator

      Semicorex SOI Wafer Silicon On Insulator is a specialized type of semiconductor wafer used in the production of advanced integrated circuits. They are designed to improve the performance, power efficiency, and reliability of electronic devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC Boat for Solar Cell Diffusion

      SiC Boat for Solar Cell Diffusion

      The reliability and outstanding performance of Semicorex SiC Boat for Solar Cell Diffusion stems from their ability to consistently deliver in the demanding conditions of solar cell production. The high-quality material properties of SiC ensure that these boats perform optimally over a wide range of operating conditions, contributing to the stable and efficient production of solar cells. Their performance attributes include excellent mechanical strength, thermal stability, and resistance to environmental stressors, making SiC Boat for Solar Cell Diffusion an indispensable tool in the photovoltaic industry.
    • CVD-SiC Showerhead

      CVD-SiC Showerhead

      Semicorex CVD-SiC showerhead provides durability, excellent thermal management, and resistance to chemical degradation, making it a suitable choice for demanding CVD processes in the semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Tantalum Carbide Coating Graphite Crucible

      Tantalum Carbide Coating Graphite Crucible

      Semicorex Tantalum Carbide Coating Graphite Crucible is a specialized component designed for use in the semiconductor industry, particularly in the growth of Silicon Carbide (SiC) crystals. This high-performance crucible stands out due to its unique material composition and structural design, making it an indispensable tool in advanced crystal growth processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • Ceramic Bushing

      Ceramic Bushing

      Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated components in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Ceramic Bushing has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
    • Graphite Parts

      Graphite Parts

      Semicorex isostatic graphite parts are mainly used for graphite crucibles in the crystal growth process, three-petal ring high-purity graphite and TaC coating applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • Related Blog
    • Reviews

    • CVD process for SiC wafer epitaxy

      The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

    • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

      In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

    • Silicon Carbide Substrate Core Process Flow

      Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

    • What are SiC-coated graphite susceptors?

      The tray (base) that supports SiC wafers, also known as a "susceptor," is a core component of semiconductor manufacturing equipment. And what exactly is this susceptor that carries the wafers?

    • The Crucial Role of Epitaxial Layers in Semiconductor Devices

      Epitaxial growth refers to the process of growing a crystallographically well-ordered monocrystalline layer on a substrate. Generally speaking, epitaxial growth involves the cultivation of a crystal layer on a single-crystal substrate, with the grown layer sharing the same crystallographic orientation as the original substrate. Epitaxy is extensively utilized in semiconductor manufacturing, such as the production of epitaxial silicon wafers in the integrated circuit industry.

    • Introduction to Silicon Carbide Power Devices

      Silicon carbide (SiC) power devices are semiconductor devices made of silicon carbide materials, mainly used in high-frequency, high-temperature, high-voltage and high-power electronic applications. Compared with traditional silicon (Si)-based power devices, silicon carbide power devices have higher bandgap width, higher critical breakdown electric field, higher thermal conductivity and higher saturated electron drift velocity, which makes them have great development potential and application value in the field of power electronics.

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