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  • Silicon Carbide Wafers

    • China Silicon Carbide Wafers Manufacturers, Suppliers, Factory

    Semicorex has been producing Silicon Carbide Wafers for many years and is one of the professional Silicon Carbide Wafers manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Vertical Wafer Boat

      Vertical Wafer Boat

      Semicorex Vertical Wafer Boat represents a crucial component within semiconductor processing, designed to securely house and transport delicate silicon wafers throughout various stages of fabrication. Crafted from Silicon Carbide (SiC), a robust and thermally stable material renowned for its exceptional properties in harsh environments, these boats ensure the integrity and safety of wafers during processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Half Parts Drum Products Epitaxial Part

      Half Parts Drum Products Epitaxial Part

      Enhance the functionality and efficiency of your semiconductor devices with our cutting-edge Half Parts Drum Products Epitaxial Part. Specifically designed for the LPE reactor's intake components, this semi-cylindrical accessory plays a pivotal role in optimizing your semiconductor processes.
      Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Si3N4 Sleeve

      Si3N4 Sleeve

      Si3N4 Sleeve by Semicorex is a versatile and high-performance material that offers a unique combination of low density, superior hardness, excellent wear resistance, and exceptional thermal and chemical stability.**
    • SiC Coated Graphite Barrel Susceptor

      SiC Coated Graphite Barrel Susceptor

      If you're looking for a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex SiC Coated Graphite Barrel Susceptor is the ideal choice. Its exceptional thermal conductivity and heat distribution properties make it the go-to choice for reliable and consistent performance in high-temperature and corrosive environments.
    • TaC-Coating Crucible

      TaC-Coating Crucible

      Semicorex TaC-Coating Crucible has emerged as an essential tool in the pursuit of high-quality semiconductor crystals, enabling advancements in material science and device performance. The TaC-Coating Crucible's unique combination of properties makes them ideally suited for the demanding environments of crystal growth processes, offering distinct advantages over traditional materials.**
    • High-Temperature SiC Coating for Plasma Etch Chambers

      High-Temperature SiC Coating for Plasma Etch Chambers

      When it comes to wafer handling processes such as epitaxy and MOCVD, Semicorex's High-Temperature SiC Coating for Plasma Etch Chambers is the top choice. Our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance thanks to our fine SiC crystal coating.
    • Related Blog
    • Reviews

    • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

      The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

    • What is Crystal Growth Furnace System

      The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.

    • About Semiconductor Heating Elements

      Heat treatment is one of the essential and important processes in the semiconductor process. Thermal process is the process of applying thermal energy to a wafer by placing it in an environment filled with a specific gas, including oxidation/diffusion/annealing, etc.

    • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

      Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

    • Introduction to Third-Generation Semiconductors: GaN and Related Epitaxial Technologies

      GaN materials gained prominence following the awarding of the 2014 Nobel Prize in Physics for blue LEDs. Initially entering the public eye through fast-charging applications in consumer electronics, GaN-based power amplifiers and RF devices have also quietly emerged as critical components in 5G base stations. In recent years, GaN-based automotive-grade power devices have shown promise, potentially opening new growth avenues for GaN material applications.

    • SiC Single Crystal Substrate Processing

      Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

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