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  • Silicon Carbide Etching Tray Holder

    • China Silicon Carbide Etching Tray Holder Manufacturers, Suppliers, Factory

    Semicorex has been producing Silicon Carbide Etching Tray Holder for many years and is one of the professional Silicon Carbide Etching Tray Holder manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Silicon Carbide Epitaxy Susceptor

      Silicon Carbide Epitaxy Susceptor

      Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Epitaxy Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
    • MOCVD Cover Star Disc Plate for Wafer Epitaxy

      MOCVD Cover Star Disc Plate for Wafer Epitaxy

      Semicorex is a renowned manufacturer and supplier of high-quality MOCVD Cover Star Disc Plate for Wafer Epitaxy. Our product is specially designed to cater to the needs of the semiconductor industry, particularly in growing the epitaxial layer on the wafer chip. Our susceptor is used as the center plate in MOCVD, with a gear or ring-shaped design. The product is highly resistant to high heat and corrosion, making it ideal for use in extreme environments.
    • Silicon Carbide Graphite Substrate MOCVD Susceptor

      Silicon Carbide Graphite Substrate MOCVD Susceptor

      Semicorex Silicon Carbide Graphite Substrate MOCVD Susceptor is the ultimate choice for semiconductor manufacturers looking for a high-quality carrier that can deliver superior performance and durability. Its advanced material ensures even thermal profile and laminar gas flow pattern, delivering high-quality wafers.
    • GaN Epitaxy

      GaN Epitaxy

      Semicorex provides custom thin film HEMT (Gallium nitride) GaN epitaxy on Si/SiC/GaN substrates. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • TaC Coating Wafer Tray

      TaC Coating Wafer Tray

      Semicorex TaC Coating Wafer Tray must be engineered to withstand the challenges of the extreme conditions within the reaction chamber, including high temperatures and chemically reactive environments.**
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    • What is CVD process in semiconductor?

      Chemical vapor deposition CVD refers to the introduction of two or more gaseous raw materials into a reaction chamber under vacuum and high temperature conditions, where the gaseous raw materials react with each other to form a new material, which is deposited on the wafer surface.

    • Wolfspeed Pauses German Semiconductor Plant Construction Plans

      According to reports from German media, U.S. chip manufacturer Wolfspeed is pausing its plans to build a semiconductor plant in Germany.

    • Silicon Carbide Applications

      Silicon carbide has a large number of applications in emerging industries and traditional industries. At present, the global semiconductor market has exceeded 100 billion yuan. It is expected that by 2025, the global sales of semiconductor manufacturing materials will reach 39.5 billion US dollars, of which the silicon carbide semiconductor market is expected to reach a market size of 2.5 billion US dollars in 2025. At the same time, silicon carbide is still the material with the best application performance in traditional ceramics, refractory, high temperature, grinding and other fields.

    • Ion Implant and Diffusion Process

      Ion implantation is a method of semiconductor doping and one of the main processes in semiconductor manufacturing.

    • Method for preparing SiC powder

      Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

    • Silicon Carbide Wafer Epitaxy Technology

      Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

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