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  • SiC Coated Epitaxial Reactor Barrel

    SiC Coated Epitaxial Reactor Barrel

    The Semicorex SiC Coated Epitaxial Reactor Barrel is a top-quality graphite product coated with high-purity SiC. Its excellent density and thermal conductivity make it an ideal choice for use in LPE processes, providing exceptional heat distribution and protection in corrosive and high-temperature environments.
  • SiC-Coated Barrel Susceptor

    SiC-Coated Barrel Susceptor

    With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Barrel Susceptor is the perfect choice for use in single crystal growth applications. Its silicon carbide coating provides exceptional flatness and heat distribution properties, ensuring reliable and consistent performance in even the most demanding high-temperature environments.
  • Susceptor Disc

    Susceptor Disc

    The Semicorex Susceptor Disc is an indispensable tool in Metal-Organic Chemical Vapor Deposition (MOCVD), specifically engineered for supporting and heating semiconductor wafers during the critical process of epitaxial layer deposition. The Susceptor Disc is instrumental in the manufacturing of semiconductor devices, where precise layer growth is paramount. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • TaC Coated Chuck

    TaC Coated Chuck

    Semicorex TaC coated chuck represents a significant advancement in the field of semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC Coated Epitaxy Disc

    SiC Coated Epitaxy Disc

    There are extensive properties of Semicorex SiC Coated Epitaxy Disc that make it an indispensable component in semiconductor manufacturing, where the precision, durability, and robustness of equipment are paramount for the success of high-tech semiconductor devices. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Coated Epitaxy Disc that fuse quality with cost-efficiency.**
  • SiC Multi Pocket Susceptor

    SiC Multi Pocket Susceptor

    Semicorex SiC Multi Pocket Susceptor represents a critical enabling technology in the epitaxial growth of high-quality semiconductor wafers. Fabricated through a sophisticated Chemical Vapor Deposition (CVD) process, these susceptors provide a robust and high-performance platform for achieving exceptional epitaxial layer uniformity and process efficiency.**
  • Related Blog
  • Reviews

  • What is the process of SiC epitaxial?

    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

  • What is liquid phase epitaxy?

    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • Tantalum carbide coatings in semiconductor industry

    The development of high-powered blue and UV LEDs has enabled the creation of full-color LED TV displays, as well as white LED automotive and domestic lighting. These LEDs are based on Gallium Nitride, which is deposited on substrate wafers supported by CVD SiC-coated graphite susceptor using the MOCVD process.

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

  • A Review of 9 Sintering Techniques for Silicon Carbide Ceramics

    Silicon carbide (SiC), a prominent structural ceramic, is renowned for its exceptional properties, including high-temperature strength, hardness, elastic modulus, wear resistance, thermal conductivity, and corrosion resistance. These attributes make it suitable for a wide range of applications, from traditional industrial uses in high-temperature kiln furniture, burner nozzles, heat exchangers, sealing rings, and sliding bearings, to advanced applications like ballistic armor, space mirrors, semiconductor wafer chucks, and nuclear fuel cladding.

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