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    Semicorex is a reputable supplier and manufacturer of SiC Coated MOCVD Graphite Satellite Platform. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • MOCVD Inlet Rings

    MOCVD Inlet Rings

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite in China. Our MOCVD Inlet Rings have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • High Purity Graphite Rigid Felt

    High Purity Graphite Rigid Felt

    Semicorex provides High Purity Graphite Rigid Felt, a rigid insulation material based on carbon fibers. We have been manufacturer and supplier of graphite materials for many years. Our High Purity Graphite Rigid Felt has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Tantalum Carbide Ring

    Tantalum Carbide Ring

    Semicorex Tantalum Carbide Ring is a graphite ring coated with tantalum carbide, used as a guide ring in silicon carbide crystal growth furnaces to ensure precise temperature and gas flow control. Choose Semicorex for its advanced coating technology and high-quality materials, delivering durable and reliable components that enhance crystal growth efficiency and product lifespan.*
  • Rigid Composite Felt

    Rigid Composite Felt

    Semicorex Rigid Composite Felt is a premium material crafted from a blend of PAN-based and viscose-based carbon fiber felts. Choose Semicorex for high-performance, durable Rigid Composite Felt that offer superior chemical resistance and thermal stability.*
  • Graphite Chuck

    Graphite Chuck

    Semicorex Graphite Chuck is a crucial component in polysilicon manufacturing, widely used in the solar industry. As the demand for high-purity silicon wafers increases, the need for high-performance processing tools such as graphite chucks has become essential. Manufactured from high-purity specialty graphite, our graphite chucks are designed to withstand extreme temperatures, chemical exposure, and mechanical stresses while maintaining dimensional stability.*
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    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • Dry Etching vs Wet Etching

    In semiconductor fabrication, etching is one of the major steps, along with photolithography and thin-film deposition. It involves removing unwanted materials from the surface of a wafer using chemical or physical methods. This step is carried out after coating, photolithography, and developing. It is used to remove the exposed thin film material, leaving only the desired portion of the wafer, and then removing the excess photoresist. These steps are repeated numerous times to create complex integrated circuits.

  • Applications of Gallium Oxide Wafer

    Gallium oxide (Ga2O3) has emerged as a promising material for various applications, particularly in power devices and radio frequency (RF) devices. In this article, we explore the key opportunities and target markets for gallium oxide in these domains.

  • The unit in semiconductor: Angstrom

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    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

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