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  • Semiconductor Wafer Boat

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    Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Semiconductor Wafer Boat has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Wafer Chuck

    SiC Wafer Chuck

    Semicorex SiC Wafer Chuck stands as a pinnacle of innovation in semiconductor manufacturing, serving as a crucial component in the intricate process of semiconductor fabrication. Crafted with meticulous precision and cutting-edge technology, this chuck plays an indispensable role in supporting and stabilizing silicon carbide (SiC) wafers during various stages of production. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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    4" Gallium Oxide Substrates

    Semicorex 4" Gallium Oxide Substrates represent a new chapter in the story of fourth-generation semiconductors, with an accelerating pace of mass production and commercialization. These substrates exhibit exceptional benefits for various advanced technological applications. Gallium Oxide substrates not only symbolize a significant advancement in semiconductor technology but also open up new avenues for improving device efficiency and performance across a spectrum of high-stakes industries. We at Semicorex are dedicated to manufacturing and supplying high-performance 4" Gallium Oxide Substrates that fuse quality with cost-efficiency.**
  • AIN Substrate

    AIN Substrate

    Semicorex’s AIN Substrate excels in superior thermal management and electrical isolation, providing a robust solution crafted from high-purity AlN ceramics. This white ceramic material is lauded for its comprehensive properties.**
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  • Substantial growth of the SiC coated graphite susceptor market

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • Porous Graphite for SiC Crystal Growth

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  • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

  • What is Dummy Wafer

    A Dummy Wafer is a specialized wafer utilized primarily to fill machine equipment during the wafer manufacturing process.

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