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    • China carbon-carbon composite Manufacturers, Suppliers, Factory

    Semicorex has been producing carbon-carbon composite for many years and is one of the professional carbon-carbon composite manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • 30mm Aluminum Nitride Wafer Substrate

      30mm Aluminum Nitride Wafer Substrate

      The unique attributes of Semicorex 30mm Aluminum Nitride Wafer Substrate make it an ideal substrate for ultraviolet (UV) LEDs, UV detectors, UV lasers, and the next generation of 5G high-power/high-frequency RF devices. In wireless communications, 30mm Aluminum Nitride Wafer Substrate’s properties facilitate the development of devices capable of handling the high power and frequencies essential for 5G technologies, enhancing signal transmission and reception. Furthermore, in fields like healthcare and military, AlN-based devices are employed in medical phototherapy for treating skin conditions, drug discovery through photodynamic therapies, and secure communication technologies in aerospace, underscoring 30mm Aluminum Nitride Wafer Substrate’s versatility and critical role in technological advancements across diverse sectors.
    • 4

      4" 6" 8" N-type SiC Ingot

      Semicorex provides N-type SiC ingot with 4 inches, 6 inches and 8 inches. We have been manufacturer and supplier of wafers for many years. Our 4" 6" 8" N-type SiC Ingot has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Planetary Disk

      Planetary Disk

      Semicorex Planetary Disk, silicon carbide coated graphite wafer susceptor or carrier designed for Molecular Beam Epitaxy (MBE) processes within Metal-Organic Chemical Vapor Deposition (MOCVD) furnaces. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC Ceramic Chuck

      SiC Ceramic Chuck

      Semicorex SiC Ceramic Chuck is a highly specialized component designed for use in semiconductor epitaxial processes, where its role as a vacuum chuck is crucial. With our commitment to delivering top-quality products at competitive prices, we are poised to be your long-term partner in China.*
    • Wafer Cassettes

      Wafer Cassettes

      Semicorex PFA Wafer Cassettes are high-performance component used to safely hold and transport wafers during semiconductor processing. Choose Semicorex for its industry-leading quality, ensuring superior wafer protection, contamination control, and compatibility with automated systems.*
    • SiC Wafer Grinding Disk

      SiC Wafer Grinding Disk

      Unlock unparalleled precision in semiconductor wafer surface finishing with our state-of-the-art SiC Wafer Grinding Disk. This essential component is meticulously designed for use in semiconductor equipment, specifically crafted to achieve optimal results in wafer grinding applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

      In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

    • The structure of Electrostatic Chuck(ESC)

      An Electrostatic Chuck (ESC) is a device used to hold semiconductor wafers in place during processes such as etching, deposition, or polishing.

    • Introducing Physical Vapor Transport (PVT) 

      SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

    • Substrate and Epitaxy

      In the process of wafer preparation, there are two core links: one is the preparation of the substrate, and the other is the implementation of the epitaxial process. The substrate, a wafer carefully made of semiconductor single crystal material, can be directly put into the wafer manufacturing process as a basis to produce semiconductor devices, or further enhance the performance through the epitaxial process.

    • The Study on Reaction-Sintered SiC Ceramics and Their Properties

      Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

    • Annealing Processes in Modern Semiconductor Manufacturing

      As technology nodes continue to shrink, the formation of ultra-shallow junctions presents significant challenges. Thermal annealing processes including Rapid thermal annealing (RTA) and flash lamp annealing (FLA) are vital techniques that maintain high impurity activation rates while minimizing diffusion, ensuring optimal device performance.

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