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China cfc carbon fiber Manufacturers, Suppliers, Factory

Semicorex has been producing cfc carbon fiber for many years and is one of the professional cfc carbon fiber manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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  • Vertical Wafer Boat

    Vertical Wafer Boat

    Semicorex Vertical Wafer Boat represents a crucial component within semiconductor processing, designed to securely house and transport delicate silicon wafers throughout various stages of fabrication. Crafted from Silicon Carbide (SiC), a robust and thermally stable material renowned for its exceptional properties in harsh environments, these boats ensure the integrity and safety of wafers during processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC MOCVD Inner Segment

    SiC MOCVD Inner Segment

    Semicorex SiC MOCVD Inner Segment is an essential consumable for metal-organic chemical vapor deposition (MOCVD) systems used in the production of silicon carbide (SiC) epitaxial wafers. It's precisely designed to withstand the demanding conditions of SiC epitaxy, ensuring optimal process performance and high-quality SiC epilayers.**
  • High Purity Quartz Crucible

    High Purity Quartz Crucible

    Semicorex High Purity Quartz Crucible meticulously crafted from high-purity quartz, is essential for extracting single-crystal silicon—an indispensable component in modern electronics and renewable energy technologies.**
  • Hard Composite Carbon Fiber Felt

    Hard Composite Carbon Fiber Felt

    Semicorex provides Hard Composite Carbon Fiber Felt, a rigid insulation material based on carbon fibers. We have been manufacturer and supplier of graphite materials for many years. Our High Purity Graphite Rigid Felt has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Epitaxial Susceptor

    Epitaxial Susceptor

    Semicorex Epitaxial Susceptor with SiC coating is designed to support and hold SiC wafers during the epitaxial growth process, ensuring precision and uniformity in semiconductor manufacturing. Choose Semicorex for its high-quality, durable, and customizable products that meet the rigorous demands of advanced semiconductor applications.*
  • Graphite Ion Implanter

    Graphite Ion Implanter

    Semicorex Graphite Ion Implanter stands as a critical component in the realm of semiconductor manufacturing, distinguished by its fine particle composition, excellent conductivity, and resilience to extreme conditions.
  • Related Blog
  • Reviews

  • What Challenges Are Involved in SiC Manufacturing?

    In the landscape of wide bandgap semiconductor materials, silicon carbide (SiC) has emerged as a highly regarded material, particularly excelling in the high-power conversion domain.

  • Difficulty in preparing SiC substrates

    At present, the most important direction trend of substrate development is to expand the diameter. The 6-inch mass production line in the global SiC market is maturing, and leading companies have entered the 8-inch market.

  • GaN Industry Applications

    The application areas of SiC-based and Si-based GaN are not strictly separated. In GaN-On-SiC devices, the cost of SiC substrate is relatively high, and with the growing maturity of SiC long crystal technology, the cost of the device is expected to fall further, and it is used in power devices in the field of power electronics.

  • Hierarchical Porous Carbon Materials: Synthesis and Introduction

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

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