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  • MOCVD Cover Star

    • China MOCVD Cover Star Manufacturers, Suppliers, Factory

    Semicorex has been producing MOCVD Cover Star for many years and is one of the professional MOCVD Cover Star manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Wafer Cassette

      Wafer Cassette

      Semicorex wafer cassette made of PFA (Perfluoroalkoxy) is specifically designed for use in semiconductor processes. PFA is a high-performance fluoropolymer known for its excellent chemical resistance, thermal stability, and low particle generation characteristics. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Graphite Waferholder

      Graphite Waferholder

      Semicorex SiC Coated Graphite Waferholder is a high-performance component designed for precise wafer handling in semiconductor epitaxy growth processes. Semicorex’s expertise in advanced materials and manufacturing ensures our products offer unmatched reliability, durability, and customization for optimal semiconductor production.*
    • Half Parts Drum Products Epitaxial Part

      Half Parts Drum Products Epitaxial Part

      Enhance the functionality and efficiency of your semiconductor devices with our cutting-edge Half Parts Drum Products Epitaxial Part. Specifically designed for the LPE reactor's intake components, this semi-cylindrical accessory plays a pivotal role in optimizing your semiconductor processes.
      Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Silicon Carbide Coating Graphite Susceptor for MOCVD

      Silicon Carbide Coating Graphite Susceptor for MOCVD

      Semicorex is a trusted supplier and manufacturer of silicon carbide coating graphite susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
    • CVD shower head with SiC Coat

      CVD shower head with SiC Coat

      Semicorex CVD shower head with SiC Coat represents an advanced component engineered for precision in industrial applications, notably within the realms of chemical vapor deposition (CVD) and plasma-enhanced chemical vapor deposition (PECVD). Serving as a critical conduit for the delivery of precursor gases or reactive species, this specialized CVD shower head with SiC Coat facilitates the precise deposition of materials onto a substrate’s surface, integral to these sophisticated manufacturing processes.
    • SiC Ceramic Heat Transfer Plates

      SiC Ceramic Heat Transfer Plates

      Semicorex SiC Ceramic Heat Transfer Plates, based on SiC as the primary material, undergo high-temperature sintering at 2250°C, resulting in a highly vitrified, zero-porosity dense ceramic body with an SiC content of ≥99.3%. Exhibiting a bending strength of ≥410MPa and a thermal conductivity of 140W/m.k, these ceramics are the only materials capable of withstanding corrosion from strong acids such as hydrofluoric acid (HF) and sulfuric acid (H2SO4) in the semiconductor industry. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Ceramic Heat Transfer Plates that fuse quality with cost-efficiency. **
    • Related Blog
    • Reviews

    • GaN vs SiC

      There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

    • What is isostatic graphite?

      Isostatic graphite is a type of graphite with an ultra-fine grain. It is used for applications where the mechanical properties of other fine-grained graphites are inadequate.

    • Surface Polishing of Silicon Wafers

      Silicon wafer surface polishing is a crucial process in semiconductor manufacturing. Its primary goal is to achieve extremely high standards of surface flatness and roughness by removing micro-defects, layers of stress damage, and contamination from impurities such as metal ions.

    • Substrate Cutting and Grinding Process

      SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

    • SiC Ceramics: The Indispensable Material for High-Precision Components in Semiconductor Manufacturing

      Semiconductor manufacturing, the cornerstone of modern technological advancement, is in constant pursuit of smaller, faster, and more efficient integrated circuits. This relentless pursuit drives the need for increasingly precise and sophisticated manufacturing processes, where each step relies heavily on high-performance, high-quality, and high-precision equipment. Silicon carbide (SiC), a high-performance structural ceramic material, plays a crucial role in this demanding environment.

    • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

      Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

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