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    • China machining zirconia Manufacturers, Suppliers, Factory

    Semicorex has been producing machining zirconia for many years and is one of the professional machining zirconia manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Semiconductor Wafer Boat

      Semiconductor Wafer Boat

      Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Semiconductor Wafer Boat has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • ESC Chuck

      ESC Chuck

      Semicorex ESC Chuck is a critical component in the semiconductor industry, specifically designed to securely hold wafers during various fabrication processes. Semicorex provides top-quality products at competitive prices, we are ready to become your long-term partner in China.*
    • Porous Graphite Crucible

      Porous Graphite Crucible

      Semicorex provide high-quality porous graphite crucible with customized service, our porous graphite material is top-notch quality with high specifications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • MOCVD Cover Star Disc Plate for Wafer Epitaxy

      MOCVD Cover Star Disc Plate for Wafer Epitaxy

      Semicorex is a renowned manufacturer and supplier of high-quality MOCVD Cover Star Disc Plate for Wafer Epitaxy. Our product is specially designed to cater to the needs of the semiconductor industry, particularly in growing the epitaxial layer on the wafer chip. Our susceptor is used as the center plate in MOCVD, with a gear or ring-shaped design. The product is highly resistant to high heat and corrosion, making it ideal for use in extreme environments.
    • Graphite Heater For Hot Zone

      Graphite Heater For Hot Zone

      Semicorex Graphite Heater For Hot Zone, designed to operate reliably within high-temperature furnaces, are engineered to withstand the challenging conditions inherent to processes like chemical vapor deposition (CVD), epitaxy, and high-temperature annealing. We at Semicorex are dedicated to manufacturing and supplying high-performance Graphite Heater For Hot Zone that fuses quality with cost-efficiency.**
    • AlN Ceramic Crucible

      AlN Ceramic Crucible

      Designed to withstand extreme conditions, the AlN Ceramic Crucible presented by Semicorex is an indispensable tool for professionals working with non-ferrous metals and semiconductor materials like gallium arsenide.
    • Related Blog
    • Reviews

    • High-Purity CVD Thick SiC: Process Insights for Material Growth

      Thick, high-purity silicon carbide (SiC) layers, typically exceeding 1mm, are critical components in various high-value applications, including semiconductor fabrication and aerospace technologies. This article delves into the Chemical Vapor Deposition (CVD) process for producing such layers, highlighting key process parameters, material characteristics, and emerging applications.

    • How to Manufacture Graphite Rods?

      Compression molding, isostatic pressing, and rod extrusion are the three most common methods for producing graphite rods, similar to those used for creating graphite tubes.

    • What is a semiconductor?

      Semiconductors are materials that guide electrical properties between conductors and insulators, with equal probability of loss and gain of electrons in the outermost layer of the atomic nucleus, and are easily made into PN junctions. Such as "silicon (Si)", "germanium (Ge)" and other materials.

    • Difficulties in GaN preparation

      As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

    • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

      Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

    • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

      Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

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