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China Graphite Substrate Manufacturers, Suppliers, Factory

Semicorex has been producing Graphite Substrate for many years and is one of the professional Graphite Substrate manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    Semicorex CVD SiC Ring stands as an essential component within the intricate landscape of semiconductor manufacturing, specifically designed to play a crucial role in the etching process. Crafted with precision and innovation, this ring is exclusively fashioned from Chemical Vapor Deposition Silicon Carbide (CVD SiC), exemplifying a material known for its exceptional properties in the demanding semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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    SiC Wafer Grinding Disk

    Unlock unparalleled precision in semiconductor wafer surface finishing with our state-of-the-art SiC Wafer Grinding Disk. This essential component is meticulously designed for use in semiconductor equipment, specifically crafted to achieve optimal results in wafer grinding applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Part

    Tantalum Carbide Part

    Semicorex Tantalum Carbide Part is a TaC-coated graphite component designed for high-performance use in silicon carbide (SiC) crystal growth applications, offering excellent temperature and chemical resistance. Choose Semicorex for reliable, high-quality components that enhance crystal quality and production efficiency in semiconductor manufacturing.*
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    The Semicorex Susceptor Disc is an indispensable tool in Metal-Organic Chemical Vapor Deposition (MOCVD), specifically engineered for supporting and heating semiconductor wafers during the critical process of epitaxial layer deposition. The Susceptor Disc is instrumental in the manufacturing of semiconductor devices, where precise layer growth is paramount. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
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    SiC Seal Parts

    Semicorex SiC seal parts, or Silicon Carbide seal parts, represent a cutting-edge and highly efficient solution for various industrial applications where sealing integrity is paramount. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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  • What are the challenges of silicon carbide substrate production?

    Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

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    Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

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    Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

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    The recent announcement of the 2024 Nobel Prize in Physics has brought unprecedented attention to the field of artificial intelligence.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

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