China dense alumina Manufacturers, Suppliers, Factory

The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

Currently, silicon carbide (SiC) is a highly active area of research in thermal conductive ceramic materials both domestically and internationally.

In the process of silicon wafer manufacturing, after the crystal rod is cut into silicon wafers, it will need to be polished and cleaned to obtain a single crystal silicon wafer like a mirror.

The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.