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    • China CFRC Manufacturers, Suppliers, Factory

    Semicorex has been producing CFRC for many years and is one of the professional CFRC manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Ion Implantation Parts

      Ion Implantation Parts

      The Semicorex Ion Implantation Parts made of high-purity graphite components are engineered to meet the rigorous demands of semiconductor manufacturing, specifically for use in ion implantation equipment. These components boast several critical advantages that make them ideal for high-performance applications. We at Semicorex are dedicated to manufacturing and supplying high-performance Ion Implantation Parts that fuse quality with cost-efficiency.
    • SiC Heater Silicon Carbide Heating Elements

      SiC Heater Silicon Carbide Heating Elements

      Semicorex SiC Heater Silicon Carbide Heating Elements, is a specialized tool used in the handling and processing of semiconductor wafers. This crucial piece of equipment plays a pivotal role in creating the optimal thermal environment necessary for the production of high-quality semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Solar Graphite Boat for PECVD

      Solar Graphite Boat for PECVD

      Semicorex provide high-quality Solar Graphite Boat for PECVD with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • AlN Ceramic Crucible

      AlN Ceramic Crucible

      Designed to withstand extreme conditions, the AlN Ceramic Crucible presented by Semicorex is an indispensable tool for professionals working with non-ferrous metals and semiconductor materials like gallium arsenide.
    • SiC Cantilever Paddle

      SiC Cantilever Paddle

      Semicorex SiC (Silicon Carbide) Cantilever Paddle is a crucial component used in semiconductor manufacturing processes, particularly in diffusion or LPCVD (Low-Pressure Chemical Vapor Deposition) furnaces during processes like diffusion and RTP (Rapid Thermal Processing). The SiC Cantilever Paddle is to carry semiconductor wafers securely within the process tube during various high-temperature processes such as diffusion and RTP. It serves the purpose of supporting and transporting wafers within the process tube of these furnaces. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • CVD TaC Coated Ring

      CVD TaC Coated Ring

      Semicorex CVD TaC Coated Ring reigns as a critical component in semiconductor processing, symbolizing the zenith of modern materials engineering. Crafted for implementation in the most rigorous environments where precision and reliability reign supreme, this ring embodies the fusion of cutting-edge coating techniques with resilient material science. Semicorex steadfastly delivers top-tier products at competitive prices, and we eagerly anticipate forging a longstanding partnership with you in China.*
    • Related Blog
    • Reviews

    • Introduction to Silicon Carbide Power Devices

      Silicon carbide (SiC) power devices are semiconductor devices made of silicon carbide materials, mainly used in high-frequency, high-temperature, high-voltage and high-power electronic applications. Compared with traditional silicon (Si)-based power devices, silicon carbide power devices have higher bandgap width, higher critical breakdown electric field, higher thermal conductivity and higher saturated electron drift velocity, which makes them have great development potential and application value in the field of power electronics.

    • Funds on Semiconductor projects

      Every country is aware of the importance of chips and is now accelerating the construction of its own chip manufacturing supply chain ecosystem to prevent another chip shortage problem. But the advanced foundries without next-gen chip designers would be the same as “Fabs without Chips”.

    • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

      Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

    • How to do CMP Process

      In the process of silicon wafer manufacturing, after the crystal rod is cut into silicon wafers, it will need to be polished and cleaned to obtain a single crystal silicon wafer like a mirror.

    • Can you grind silicon carbide?

      Silicon carbide (SiC) has important applications in areas such as power electronics, high-frequency RF devices, and sensors for high-temperature-resistant environments due to its excellent physicochemical properties. However, the slicing operation during SiC wafer processing introduces damages on the surface, which, if left untreated, can expand during the subsequent epitaxial growth process and form epitaxial defects, thus affecting the yield of the device.

    • Silicon Carbide Industry

      The silicon carbide industry involves a chain of processes that include substrate creation, epitaxial growth, device design, device manufacturing, packaging, and testing. In general, silicon carbide is created as ingots, which are then sliced, ground, and polished to produce a silicon carbide substrate.

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