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    • China vacuum melted superalloys Manufacturers, Suppliers, Factory

    Semicorex has been producing vacuum melted superalloys for many years and is one of the professional vacuum melted superalloys manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Porous Graphite with TaC Coating

      Porous Graphite with TaC Coating

      Semicorex Porous Graphite with TaC Coating is a specialized material designed to address critical challenges in the growth of Silicon Carbide (SiC) crystals. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • Wafer Boat

      Wafer Boat

      Semicorex Wafer Boat is a critical component in the semiconductor manufacturing process, specifically designed for use in the diffusion process, where it plays a vital role in the creation of highly integrated circuits. With our steadfast commitment to providing top-quality products at competitive prices, we are ready to become your long-term partner in China.*
    • Seal Ring

      Seal Ring

      Semicorex provide high-quality Seal Ring with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Silicon Carbide Epitaxy Susceptor

      Silicon Carbide Epitaxy Susceptor

      Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Epitaxy Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
    • SiC Coated Barrel Susceptor

      SiC Coated Barrel Susceptor

      Semicorex is a large-scale manufacturer and supplier of SiC Coated Barrel Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
    • LPE SiC-Epi Halfmoon

      LPE SiC-Epi Halfmoon

      Semicorex LPE SiC-Epi Halfmoon is an indispensable asset in the world of epitaxy, providing a robust solution to the challenges posed by high temperatures, reactive gases, and stringent purity requirements.**
    • Related Blog
    • Reviews

    • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

      In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

    • About defects in SiC crystals - Micropipe

      SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

    • Applications of Gallium Oxide Wafer

      Gallium oxide (Ga2O3) has emerged as a promising material for various applications, particularly in power devices and radio frequency (RF) devices. In this article, we explore the key opportunities and target markets for gallium oxide in these domains.

    • Porous Graphite for SiC Crystal Growth

      Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

    • Core Material for SiC Growth: Tantalum Carbide Coating

      The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

    • What is graphitising？

      Graphitising is the process of transforming non-graphitic charcoal into graphitic charcoal with graphite three-dimensional regular ordered structure by high-temperature heat treatment, making full use of electrical resistance heat to heat the charcoal material to 2300~3000 ℃, and transforming the charcoal with amorphous chaotic layer structure into ordered graphite crystalline structure.

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