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    • China Sic Heating Element Manufacturers, Suppliers, Factory

    Semicorex has been producing Sic Heating Element for many years and is one of the professional Sic Heating Element manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Baffle Wafer Boat

      Baffle Wafer Boat

      Semicorex Baffle Wafer Boat is a highly advanced piece of equipment used in semiconductor processing. It has been meticulously designed to ensure the delicate wafers are kept safe during the critical stages of production. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Etching Carrier Holder for PSS Etching

      Etching Carrier Holder for PSS Etching

      Semicorex's Etching Carrier Holder for PSS Etching is engineered for the most demanding epitaxy equipment applications. Our ultra-pure graphite carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The SiC coated carrier has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
    • SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber

      SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber

      Semicorex's SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber is a highly reliable solution for semiconductor manufacturing processes, featuring superior heat distribution and thermal conductivity properties. It is also highly resistant to corrosion, oxidation, and high temperatures.
    • Wafer Process Heater

      Wafer Process Heater

      Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Wafer Process Heater has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
    • SiC Guide Ring

      SiC Guide Ring

      Semicorex SiC Guide Ring is engineered to optimize the single crystal growth process. Its exceptional thermal conductivity ensures uniform heat distribution, contributing to the formation of high-quality crystals with enhanced purity and structural integrity. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
    • Ion Implantation Parts

      Ion Implantation Parts

      The Semicorex Ion Implantation Parts made of high-purity graphite components are engineered to meet the rigorous demands of semiconductor manufacturing, specifically for use in ion implantation equipment. These components boast several critical advantages that make them ideal for high-performance applications. We at Semicorex are dedicated to manufacturing and supplying high-performance Ion Implantation Parts that fuse quality with cost-efficiency.
    • Related Blog
    • Reviews

    • Application Scenarios for Epitaxial Layers

      We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

    • What is SiC epitaxy?

      Silicon Carbide (SiC) epitaxy is a key technology in the field of semiconductors, particularly for the development of high-power electronic devices. SiC is a compound semiconductor with a wide bandgap, which makes it ideal for applications that require a high-temperature and high-voltage operation.

    • About defects in SiC crystals - Micropipe

      SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

    • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

      Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

    • Core Material for SiC Growth: Tantalum Carbide Coating

      The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

    • What is SiC coated graphite susceptor?

      In order to introduce the SiC coated graphite susceptor, it's important to understand its application. When manufacturing devices, further epitaxial layers are required to be built on some wafer substrates.

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