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China sic grinding Manufacturers, Suppliers, Factory

Semicorex has been producing sic grinding for many years and is one of the professional sic grinding manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    Tantalum Carbide Coated Graphite Susceptor

    Semicorex provides Tantalum Carbide Coated Graphite Susceptor with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Porous Graphite with TaC Coating

    Porous Graphite with TaC Coating

    Semicorex Porous Graphite with TaC Coating is a specialized material designed to address critical challenges in the growth of Silicon Carbide (SiC) crystals. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Tantalum Carbide Guide Ring

    Tantalum Carbide Guide Ring

    Semicorex Tantalum Carbide Guide Ring is a graphite ring coated with tantalum carbide, used in silicon carbide crystal growth furnaces for seed crystal support, temperature optimization, and enhanced growth stability. Choose Semicorex for its advanced materials and design, which significantly improve the efficiency and quality of crystal growth.*
  • 4

    4" 6" High Purity Semi-Insulating SiC Ingot

    Semicorex provides high purity semi-insulating SiC ingot with 4 inches and 6 inches. We have been manufacturer and supplier of wafers for many years. Our 4" 6" High Purity Semi-Insulating SiC Ingot has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • 10x10mm Nonpolar M-plane Aluminum Substrate

    10x10mm Nonpolar M-plane Aluminum Substrate

    The unique attributes of Semicorex 10x10mm Nonpolar M-plane Aluminum Substrate make it an ideal substrate for ultraviolet (UV) LEDs, UV detectors, UV lasers, and the next generation of 5G high-power/high-frequency RF devices. In wireless communications, 10x10mm Nonpolar M-plane Aluminum Substrate’s properties facilitate the development of devices capable of handling the high power and frequencies essential for 5G technologies, enhancing signal transmission and reception. Furthermore, in fields like healthcare and military, AlN-based devices are employed in medical phototherapy for treating skin conditions, drug discovery through photodynamic therapies, and secure communication technologies in aerospace, underscoring 10x10mm Nonpolar M-plane Aluminum Substrate’s versatility and critical role in technological advancements across diverse sectors.
  • CVD SiC Showerhead

    CVD SiC Showerhead

    Semicorex CVD SiC Showerhead is an essential component in modern CVD processes for achieving high-quality, uniform thin films with improved efficiency and throughput. The CVD SiC Showerhead's superior gas flow control, contribution to film quality, and long lifespan make it indispensable for demanding semiconductor manufacturing applications.**
  • Related Blog
  • Reviews

  • Difficulty in preparing SiC substrates

    At present, the most important direction trend of substrate development is to expand the diameter. The 6-inch mass production line in the global SiC market is maturing, and leading companies have entered the 8-inch market.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • What is Crystal Growth Furnace System

    The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.

  • SiC Cutting

    Silicon carbide (SiC) is highly favored in the semiconductor industry for its excellent physical and chemical properties. However, the high hardness and brittleness of SiC pose considerable challenges to its processing.

  • SiC Single Crystal Substrate Processing

    Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

  • Substrate and Epitaxy

    In the process of wafer preparation, there are two core links: one is the preparation of the substrate, and the other is the implementation of the epitaxial process. The substrate, a wafer carefully made of semiconductor single crystal material, can be directly put into the wafer manufacturing process as a basis to produce semiconductor devices, or further enhance the performance through the epitaxial process.

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