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    • China sic boat Manufacturers, Suppliers, Factory

    Semicorex has been producing sic boat for many years and is one of the professional sic boat manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • MOCVD Inlet Seal Ring

      MOCVD Inlet Seal Ring

      Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite in China. Our MOCVD Inlet Seal Ring has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
    • Epi Pre Heat Ring

      Epi Pre Heat Ring

      Enhance the efficiency and precision of your semiconductor epitaxial processes with the Semicorex cutting-edge Epi Pre Heat Ring. Crafted with precision from SiC-coated graphite, this advanced ring plays a pivotal role in optimizing your epitaxial growth by pre-heating process gases before they enter the chamber.
    • Silicon Carbide Tray

      Silicon Carbide Tray

      Semicorex Silicon Carbide Tray is built to withstand extreme conditions while ensuring remarkable performance. It plays a crucial role in the ICP etching process, semiconductor diffusion, and the MOCVD epitaxial process.
    • CVD Chemical Vapor Deposition Furnaces

      CVD Chemical Vapor Deposition Furnaces

      Semicorex CVD Chemical Vapor Deposition furnaces make the manufacture of high-quality epitaxy more efficient. We provide custom furnace solutions. Our CVD Chemical Vapor Deposition furnaces have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Porous Graphite Crucible

      Porous Graphite Crucible

      Semicorex provide high-quality porous graphite crucible with customized service, our porous graphite material is top-notch quality with high specifications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Ultra-Thin Graphite with High Porosity

      Ultra-Thin Graphite with High Porosity

      Semicorex Ultra-Thin Graphite with High Porosity is primarily utilized in the semiconductor industry, particularly in the single crystal growth process featuring excellent surface adhesion, superior heat resistance, high porosity and ultra-thin thickness with outstanding machinability. We at Semicorex are dedicated to manufacturing and supplying high-performance Ultra-Thin Graphite with High Porosity that fuse quality with cost-efficiency. **
    • Related Blog
    • Reviews

    • Dry Etching vs Wet Etching

      In semiconductor fabrication, etching is one of the major steps, along with photolithography and thin-film deposition. It involves removing unwanted materials from the surface of a wafer using chemical or physical methods. This step is carried out after coating, photolithography, and developing. It is used to remove the exposed thin film material, leaving only the desired portion of the wafer, and then removing the excess photoresist. These steps are repeated numerous times to create complex integrated circuits.

    • Doping Control in Sublimation SiC Growth

      Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

    • Infineon Unveils World’s First 300mm Power GaN Wafer

      Recently, Infineon Technologies announced the successful development of the world’s first 300mm power Gallium Nitride (GaN) wafer technology.

    • Monocrystalline Silicon Manufacturing

      The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.

    • Silicon Carbide Wafer Epitaxy Technology

      Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

    • The significance of porous graphite materials to SiC crystal growth

      Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

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