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    Semicorex Alumina Fastener is integral to the construction of equipment used in chemical vapor deposition (CVD), ion implantation, photolithography, and semiconductor manufacturing.
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    Susceptors for MOCVD Reactors

    Semicorex's Susceptors for MOCVD Reactors are high-quality products used in the semiconductor industry for various applications such as silicon carbide layers and epitaxy semiconductor. Our product is available in gear or ring shape and is designed to achieve high-temperature oxidation resistance, making it stable at temperatures up to 1600°C.
  • Sapphire Crystal Growth Heater

    Sapphire Crystal Growth Heater

    Enhance your capacity for precision thermal management with the Semicorex Sapphire Crystal Growth Heater. This heater, meticulously designed for optimal performance, boasts a SiC layer integration that solidifies its role as a superior element in crystal growth operations, promoting both high efficiency and dependability.We at Semicorex are dedicated to manufacturing and supplying high-performance Sapphire Crystal Growth Heater that fuse quality with cost-efficiency.
  • Glass-like Carbon Coated Rigid Felt

    Glass-like Carbon Coated Rigid Felt

    The Glass-like Carbon Coated Rigid Felt, a signature product of Semicorex,consists of a Carbon Fiber rigid felt substrate enveloped by a glass-like carbon coating, combining the inherent strength of the felt with the exceptional surface properties of the glass-like carbon. Together, they create a material that stands out for its performance under extreme conditions.**
  • 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate

    4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafer substrates for many years. Our 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Silicon Carbide Process Tube

    Silicon Carbide Process Tube

    Semicorex Silicon Carbide Process Tube is a crucial component in the realm of semiconductor manufacturing, specifically designed for use in vertical furnaces employed in various semiconductor processing applications such as RTP, diffusion. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Related Blog
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  • Why Is There Increasing Demand for High-Thermal Conductivity SiC Ceramics in the Semiconductor Industry?

    Currently, silicon carbide (SiC) is a highly active area of research in thermal conductive ceramic materials both domestically and internationally.

  • Why choose liquid phase epitaxy method?

    Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

  • The Impact of Temperature on CVD-SiC Coatings

    Chemical Vapor Deposition (CVD) is a versatile technique for producing high-quality coatings with various applications in industries such as aerospace, electronics, and materials science. CVD-SiC coatings are known for their exceptional properties, including high temperature resistance, mechanical strength, and excellent corrosion resistance.

  • What is graphitization degree?

    The degree of graphitization is an essential measure used to assess how close carbon atoms are to forming a tightly-packed hexagonal graphite crystal structure.

  • Silicon Carbide Ceramics and Their Diverse Fabrication Processes

    This paper provides a comprehensive overview of the various manufacturing techniques employed to produce dense SiC ceramics, highlighting their unique characteristics and applications.

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

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