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With our outstanding management, robust technical capability and strict top quality regulate system, we carry on to supply our shoppers with reputable top quality, reasonable charges and excellent companies. We purpose at becoming amongst your most reliable partners and earning your fulfillment for MOCVD Equipment,Silicon Carbide Substrate,Epitaxy Semiconductor,GaN MOCVD,GaN Epitaxial Growth, Seeing believes! We sincerely welcome the new prospects abroad to set up company interactions and also expect to consolidate the interactions with all the long-established clients.
MOCVD Equipment, Customer's satisfaction is always our quest, creating value for customers is always our duty, a long term mutual-beneficial business relationship is what we're doing for. We have been an absolutely reliable partner for you personally in China. Of course, other services, like consulting, can be offered too.

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  • CVD SiC Coated Graphite Susceptor

    CVD SiC Coated Graphite Susceptor

    Semicorex CVD SiC Coated Graphite Susceptor, is a specialized tool used in the handling and processing of semiconductor wafers. The susceptor plays a crucial role in facilitating the growth of thin films, epitaxial layers, and other coatings on substrates with precise control over temperature and material properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Wafer Carrier Semiconductor

    Wafer Carrier Semiconductor

    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of Wafer Carrier Semiconductor for many years. Our Wafer Carrier Semiconductor has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Barrel Susceptor with SiC Coating in Semiconductor

    Barrel Susceptor with SiC Coating in Semiconductor

    If you're looking for a high-quality graphite susceptor coated with high-purity SiC, the Semicorex Barrel Susceptor with SiC Coating in Semiconductor is the perfect choice. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in semiconductor manufacturing applications.
  • Porous Graphite Crucible

    Porous Graphite Crucible

    Semicorex provide high-quality porous graphite crucible with customized service, our porous graphite material is top-notch quality with high specifications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Quartz Bell Jar

    Quartz Bell Jar

    Semicorex Quartz Bell Jar stands as a crucial component within the semiconductor industry, embodying both functionality and precision. Crafted from high-purity quartz, this bell-shaped enclosure serves as a vessel for various processes critical to semiconductor manufacturing, notably epitaxial growth and chemical vapor deposition (CVD). Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Black Zirconia Ring

    Black Zirconia Ring

    Semicorex Black Zirconia Ring is a high-performance component that offers a unique blend of mechanical strength, hardness, and resistance to both thermal and chemical challenges in sealing and insulation to machining and metallurgical processes.
  • Related Blog
  • Reviews

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • Silicon Carbide Industry

    The silicon carbide industry involves a chain of processes that include substrate creation, epitaxial growth, device design, device manufacturing, packaging, and testing. In general, silicon carbide is created as ingots, which are then sliced, ground, and polished to produce a silicon carbide substrate.

  • Czochralski method

    Wafers are sliced from crystal rods, which are produced from polycrystalline and pure undoped intrinsic materials. The process of transforming polycrystalline material into single crystals through melting and recrystallization is known as crystal growth. Currently, two main methods are employed for this process: the Czochralski method and the zone melting method. Among these, the Czochralski method (often referred to as the CZ method) is the most significant for growing single crystals from melts. In fact, over 85% of single crystal silicon is produced using the Czochralski method.

  • Oxidation Process

    The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

  • Chip shortage continues to be a problem

    While there is currently an oversupply of memory semiconductors due to a sluggish global economy, analog chips for automotive and industrial applications remain in short supply. Lead times for these analog chips can be as long as 40 weeks, compared to around 20 weeks for memory stocks.

  • Chip Manufacturing: Thin Film Processes

    The semiconductor thin film deposition process is an essential component of modern microelectronics technology. It involves constructing complex integrated circuits by depositing one or more thin layers of material on a semiconductor substrate.

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