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In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

Silicon carbide (SiC) ceramic materials possess a range of excellent properties, including high-temperature strength, strong oxidation resistance, superior wear resistance, thermal stability, low thermal expansion coefficient, high thermal conductivity, high hardness, thermal shock resistance, and chemical corrosion resistance. These characteristics make SiC ceramics increasingly applicable in various fields such as automotive, mechanical and chemical industries, environmental protection, space technology, information electronics, and energy. SiC ceramics have become an irreplaceable structural ceramic material in many industrial sectors due to their outstanding performance.

Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

The processing of 4H-SiC substrate mainly includes the following steps:

The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.

Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.