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  • Ceramic Boat For Wafer Processing

    • China Ceramic Boat For Wafer Processing Manufacturers, Suppliers, Factory

    Semicorex has been producing Ceramic Boat For Wafer Processing for many years and is one of the professional Ceramic Boat For Wafer Processing manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Ceramic Electrostatic Chuck

      Ceramic Electrostatic Chuck

      Semicorex Ceramic Electrostatic Chuck (ESC) is a specialized tool meticulously crafted to meet the rigorous demands of semiconductor manufacturing. With our steadfast commitment to providing top-quality products at competitive prices, we are ready to become your long-term partner in China.*
    • SiC Graphite RTP Carrier Plate for MOCVD

      SiC Graphite RTP Carrier Plate for MOCVD

      Semicorex SiC Graphite RTP Carrier Plate for MOCVD offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With a high-quality SiC coated graphite, this product is engineered to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
    • ICP Etching Carrier Plate

      ICP Etching Carrier Plate

      Semicorex's ICP Etching Carrier Plate is the perfect solution for demanding wafer handling and thin film deposition processes. Our product provides superior heat and corrosion resistance, even thermal uniformity, and laminar gas flow patterns. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
    • 4

      4" 6" 8" N-type SiC Ingot

      Semicorex provides N-type SiC ingot with 4 inches, 6 inches and 8 inches. We have been manufacturer and supplier of wafers for many years. Our 4" 6" 8" N-type SiC Ingot has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Tantalum Carbide Chuck

      Tantalum Carbide Chuck

      Semicorex Tantalum Carbide Chuck is an advanced component used in semiconductor manufacturing equipment, renowned for its exceptional thermal and mechanical properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • Alumina Plate Flange

      Alumina Plate Flange

      Semicorex Alumina Plate Flange represents a pinnacle of versatility and performance in ceramic engineering. Crafted from alumina ceramics, a material renowned for its exceptional properties, this flange embodies a perfect amalgamation of robustness, high temperature resistance, and electrical conductivity. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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    • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

      Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

    • What is the advantage of silicon carbide?

    • Difficulties in GaN preparation

      As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

    • SiC Single Crystal Substrate Processing

      Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

    • The first 6-inch Gallium Oxide substrate industrialization company

      Recently, our company announced that the company has successfully developed a 6-inch Gallium Oxide single crystal using the casting method, becoming the first domestic industrialized company to master the 6-inch Gallium Oxide single crystal substrate preparation technology.

    • What is SiC coated graphite susceptor?

      In order to introduce the SiC coated graphite susceptor, it's important to understand its application. When manufacturing devices, further epitaxial layers are required to be built on some wafer substrates.

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