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  • Barrel Structure for Semiconductor Epitaxial Reactor

    • China Barrel Structure for Semiconductor Epitaxial Reactor Manufacturers, Suppliers, Factory

    Semicorex has been producing Barrel Structure for Semiconductor Epitaxial Reactor for many years and is one of the professional Barrel Structure for Semiconductor Epitaxial Reactor manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Aluminum Nitride Insulator Rings

      Aluminum Nitride Insulator Rings

      Semicorex Aluminum Nitride Insulator Rings are indispensable components in advanced semiconductor manufacturing, particularly in high-frequency heat treatment processes. Their unique combination of high-temperature stability, superior sealing properties, exceptional thermal conductivity, and inherent durability makes them essential for ensuring precise process control, high device yields, and extended equipment lifespan in the demanding environment of semiconductor fabrication. We at Semicorex are dedicated to manufacturing and supplying high-performance Aluminum Nitride Insulator Rings that fuse quality with cost-efficiency.**
    • SiC Coated Ring

      SiC Coated Ring

      Semicorex SiC Coated Ring is a crucial component in the semiconductor epitaxial growth process, designed to meet the demanding requirements of modern semiconductor manufacturing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • TaC-coated Seal Ring

      TaC-coated Seal Ring

      Semicorex TaC-coated Seal Ring applied to sealing components provides exceptional performance advantages in the demanding environments of semiconductor fabrication. TaC coating addresses critical challenges related to chemical resistance, extreme temperatures, and mechanical wear, enabling higher process yields, increased equipment uptime, and ultimately, lower manufacturing costs. We at Semicorex are dedicated to manufacturing and supplying high-performance TaC-coated Seal Ring that fuses quality with cost-efficiency.**
    • Al2O3 Vacuum Chuck

      Al2O3 Vacuum Chuck

      Semicorex Al2O3 Vacuum Chuck is designed to meet the rigorous demands of various semiconductor production processes, including thinning, dicing, cleaning, and transporting wafers. **
    • Susceptor Disc

      Susceptor Disc

      The Semicorex Susceptor Disc is an indispensable tool in Metal-Organic Chemical Vapor Deposition (MOCVD), specifically engineered for supporting and heating semiconductor wafers during the critical process of epitaxial layer deposition. The Susceptor Disc is instrumental in the manufacturing of semiconductor devices, where precise layer growth is paramount. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
    • MOCVD Susceptor for Epitaxial Growth

      MOCVD Susceptor for Epitaxial Growth

      Semicorex is a leading supplier and manufacturer of MOCVD Susceptor for Epitaxial Growth. Our product is widely used in semiconductor industries, particularly in the growth of the epitaxial layer on the wafer chip. Our susceptor is designed to be used as the center plate in MOCVD, with a gear or ring-shaped design. The product has high heat and corrosion resistance, making it stable in extreme environments.
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    • Why Use Ultrasonic Cleaning in Semiconductor Manufacturing

      When cleaning wafers, ultrasonic cleaning and megasonic cleaning are commonly used to remove particles from the wafer surface.

    • Silicon Carbide Substrate Core Process Flow

      Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

    • About defects in SiC crystals - Micropipe

      SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

    • Knowing GaN

      Recently, the semiconductor industry has continued to pay increasing attention to Gallium Nitride (GaN) technology. Due to its excellent electronic properties, Gallium Nitride devices have important applications in many high-tech fields:

    • High-Purity Quartz: An Indispensable Material for the Semiconductor Industry

      High-purity quartz possesses remarkable physical and chemical properties. Its inherent crystal structure, shape, and lattice variations contribute to exceptional characteristics such as high-temperature resistance, corrosion resistance, abrasion resistance, low thermal expansion coefficient, high insulation, piezoelectric effects, resonant effects, and unique optical properties. These attributes make it an irreplaceable foundational material for the development of strategic and pillar industries.

    • Oxidation Process

      The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

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