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    • China about crystal growth Manufacturers, Suppliers, Factory

    Semicorex has been producing about crystal growth for many years and is one of the professional about crystal growth manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • MOCVD Inlet Rings

      MOCVD Inlet Rings

      Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite in China. Our MOCVD Inlet Rings have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
    • Seal Ring

      Seal Ring

      Semicorex provide high-quality Seal Ring with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Alumina Ceramic Wafer Chucks

      Alumina Ceramic Wafer Chucks

      Semicorex Alumina Ceramic Wafer Chucks not limited to a single industry; their unique properties make them suitable for a wide range of applications. In the semiconductor sector, they are used for holding wafers during chip fabrication. In the chemical industry, their corrosion resistance makes them ideal for handling aggressive substances. Environmental applications benefit from their stability and resistance to wear, while their mechanical properties are leveraged in the development of functional materials.We at Semicorex are dedicated to manufacturing and supplying high-performance Alumina Ceramic Wafer Chucks that fuse quality with cost-efficiency.
    • TaC Coating Guide Ring

      TaC Coating Guide Ring

      Semicorex TaC Coating Guide Ring serves as a paramount part within metal-organic chemical vapor deposition (MOCVD) equipment, ensuring the precise and stable delivery of precursor gases during the epitaxial growth process. The TaC Coating Guide Ring represents a series of properties that make it ideal for withstanding the extreme conditions found within the MOCVD reactor chamber.**
    • SiC Ceramic Seal Part

      SiC Ceramic Seal Part

      Semicorex SiC Ceramic Seal Part stands as a testament to cutting-edge materials science and engineering prowess, designed to meet the exacting demands of high-performance mechanical sealing applications across a variety of industries.**
    • SiC MOCVD Inner Segment

      SiC MOCVD Inner Segment

      Semicorex SiC MOCVD Inner Segment is an essential consumable for metal-organic chemical vapor deposition (MOCVD) systems used in the production of silicon carbide (SiC) epitaxial wafers. It's precisely designed to withstand the demanding conditions of SiC epitaxy, ensuring optimal process performance and high-quality SiC epilayers.**
    • Related Blog
    • Reviews

    • What are epitaxial wafers used for?

      Epitaxial wafers have been used in the electronics industry for decades, but their importance has only increased as technology has advanced. In this article, we will explore what epitaxial wafers are and why they are such an essential component of modern electronics.

    • Heteroepitaxy of 3C-SiC: An Overview

      The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

    • Silicon Carbide(SiC) Crystal Growth Furnace

      Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

    • Silicon Carbide Substrate Core Process Flow

      Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

    • Introduction to Third-Generation Semiconductors: GaN and Related Epitaxial Technologies

      GaN materials gained prominence following the awarding of the 2014 Nobel Prize in Physics for blue LEDs. Initially entering the public eye through fast-charging applications in consumer electronics, GaN-based power amplifiers and RF devices have also quietly emerged as critical components in 5G base stations. In recent years, GaN-based automotive-grade power devices have shown promise, potentially opening new growth avenues for GaN material applications.

    • What is graphitising？

      Graphitising is the process of transforming non-graphitic charcoal into graphitic charcoal with graphite three-dimensional regular ordered structure by high-temperature heat treatment, making full use of electrical resistance heat to heat the charcoal material to 2300~3000 ℃, and transforming the charcoal with amorphous chaotic layer structure into ordered graphite crystalline structure.

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