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    • China 6-Inch Wafers Manufacturers, Suppliers, Factory

    Semicorex has been producing 6-Inch Wafers for many years and is one of the professional 6-Inch Wafers manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Quartz Ring

      Quartz Ring

      Semicorex Quartz Ring stands as an indispensable component within the intricate realm of semiconductor manufacturing. Crafted with precision and engineered to exacting standards, this ring embodies durability, purity, and functionality, pivotal for the success of semiconductor fabrication processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • MOCVD Susceptor with TaC Coating

      MOCVD Susceptor with TaC Coating

      Semicorex MOCVD Susceptor with TaC Coating is a cutting-edge component meticulously crafted for optimum performance in semiconductor epitaxy processes within MOCVD systems. Semicorex is unwavering in our commitment to delivering superior products at highly competitive prices. We are eager to establish a lasting partnership with you in China.*
    • Graphite Felt

      Graphite Felt

      Semicorex Graphite Felt is a flexible, lightweight, and highly efficient thermal insulation material, ideal for high-temperature applications. Semicorex offers superior-quality graphite felts that deliver exceptional durability and reliability, making them the optimal choice for industries demanding advanced insulation solutions.*
    • Wafer Holder

      Wafer Holder

      Semicorex wafer holder iS critical component in semiconductor manufacturing and play a key role in ensuring accurate and efficient handling of wafers during the epitaxy process. We are firmly committed to providing the highest quality products at competitive prices and look forward to starting a business with you.*
    • Aluminum Nitride Wafer Holder

      Aluminum Nitride Wafer Holder

      You can rest assured to buy Aluminum Nitride Wafer Holder from our factory. Semicorex Aluminum Nitride (AlN) Wafer Holder stands as an indispensable component within the realm of semiconductor processing, serving as a pivotal platform for securely holding delicate wafers throughout various stages of fabrication. Crafted from high-quality aluminum nitride material, renowned for its exceptional thermal conductivity, mechanical strength, and electrical insulation properties, this wafer holder ensures optimal conditions for precise and efficient semiconductor manufacturing processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC Epitaxy

      SiC Epitaxy

      Semicorex provides custom thin film (silicon carbide) SiC epitaxy on substrates for the development of silicon carbide devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

      The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

    • Introducing Gallium Oxide(Ga2O3)

      Gallium oxide (Ga2O3) as an "ultra-wide bandgap semiconductor" material has garnered sustained attention. Ultra-wide bandgap semiconductors fall under the category of "fourth-generation semiconductors," and in comparison to third-generation semiconductors such as silicon carbide (SiC) and gallium nitride (GaN), gallium oxide boasts a bandgap width of 4.9eV, surpassing silicon carbide's 3.2eV and gallium nitride's 3.39eV. A wider bandgap implies that electrons require more energy to transition from the valence band to the conduction band, endowing gallium oxide with characteristics like high voltage resistance, high-temperature tolerance, high power capability, and radiation resistance.

    • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

      In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

    • Different types of SiC ceramics

      Silicon carbide (SiC) ceramic is a type of advanced ceramic material known for its exceptional properties and wide range of applications. It is composed of silicon (Si) and carbon (C) atoms arranged in a crystal lattice structure, resulting in a hard and strong material with excellent thermal and electrical conductivity.

    • Purification Technology of Graphite in SiC semiconductor

      Graphite is vital in producing Silicon Carbide (SiC) semiconductors, known for their exceptional thermal and electrical properties. This makes SiC ideal for high-power, high-temperature, and high-frequency applications. In SiC semiconductor manufacturing, graphite is commonly used for crucibles, heaters, and other high-temperature processing components due to its excellent thermal conductivity, chemical stability, and resistance to thermal shock.

    • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

      Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

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