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China 4 Inch Wafer Manufacturers, Suppliers, Factory

Semicorex has been producing 4 Inch Wafer for many years and is one of the professional 4 Inch Wafer manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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  • Monocrystalline Silicon Epitaxial Susceptor

    Monocrystalline Silicon Epitaxial Susceptor

    Perfect for graphite epitaxy and wafer handling process, Semicorex ultra-pure Monocrystalline Silicon Epitaxial Susceptor ensure minimal contamination and provide exceptionally long life performance. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Susceptor for MOCVD

    SiC Susceptor for MOCVD

    Semicorex is a leading manufacturer and supplier of SiC Susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • SiC Heater Silicon Carbide Heating Elements

    SiC Heater Silicon Carbide Heating Elements

    Semicorex SiC Heater Silicon Carbide Heating Elements, is a specialized tool used in the handling and processing of semiconductor wafers. This crucial piece of equipment plays a pivotal role in creating the optimal thermal environment necessary for the production of high-quality semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • ICP Silicon Carbon Coated Graphite

    ICP Silicon Carbon Coated Graphite

    Semicorex's ICP Silicon Carbon Coated Graphite is the ideal choice for demanding wafer handling and thin film deposition processes. Our product boasts superior heat and corrosion resistance, even thermal uniformity, and optimal laminar gas flow patterns.
  • Silicon Carbide Epitaxy Susceptor

    Silicon Carbide Epitaxy Susceptor

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Epitaxy Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Tantalum Carbide Coating Guide Ring

    Tantalum Carbide Coating Guide Ring

    Semicorex Tantalum Carbide Coating Guide Ring is an advanced component specifically designed for the semiconductor industry, playing a crucial role in the growth of Silicon Carbide (SiC) crystals. This product is engineered to meet the stringent demands of high-temperature and high-stress environments inherent in semiconductor crystal growth processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
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  • Infineon Unveils World’s First 300mm Power GaN Wafer

    Recently, Infineon Technologies announced the successful development of the world’s first 300mm power Gallium Nitride (GaN) wafer technology.

  • Why Choose Pressureless Sintering for SiC Ceramic Preparation?

    The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

  • What is C/C composite?

    C/C composite is a carbon-carbon composite material made of carbon fibers as reinforcement and carbon as matrix through processing and carbonization, with excellent mechanical and high-temperature resistance properties. The material was initially used in aerospace and special fields, and with the maturity of the technology, it has been gradually used in photovoltaic, automotive, lithium battery, medical devices and other fields.

  • The first 6-inch Gallium Oxide substrate industrialization company

    Recently, our company announced that the company has successfully developed a 6-inch Gallium Oxide single crystal using the casting method, becoming the first domestic industrialized company to master the 6-inch Gallium Oxide single crystal substrate preparation technology.

  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

  • Difficulties in GaN preparation

    As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

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