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The Study on Reaction-Sintered SiC Ceramics and Their Properties

Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

Why Use Ultrasonic Cleaning in Semiconductor Manufacturing

When cleaning wafers, ultrasonic cleaning and megasonic cleaning are commonly used to remove particles from the wafer surface.

How is Silicon Carbide Ceramic Applied and What is its Future in Wear and High-Temperature Resistance?

Silicon carbide (SiC) ceramics, known for their high strength, hardness, wear resistance, corrosion resistance, and high-temperature stability, have demonstrated immense potential and value across numerous industrial sectors since their introduction.

The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

What is Crystal Growth Furnace System

The single crystal growth furnace is composed of six key systems that work in harmony to ensure efficient and high-quality crystal growth.

Infineon Unveils World’s First 300mm Power GaN Wafer

Recently, Infineon Technologies announced the successful development of the world’s first 300mm power Gallium Nitride (GaN) wafer technology.

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