China SiC Substrate Manufacturers, Suppliers, Factory

A thin slice of semiconductor material is called as a wafer, which is made up of very pure single-crystal material. In the Czochralski process, a cylindrical ingot of a highly pure monocrystalline semiconductor is made by pulling a seed crystal from a melt.

Silicon Carbide (SiC) and its polytypes have been a part of human civilization for a long time; the technical interest of this hard and stable compound has been realized in 1885 and 1892 by Cowless and Acheson for grinding and cutting purposes, leading to its manufacture on a large scale.

Excellent physical and chemical properties make silicon carbide (SiC) a prominent candidate for a variety of applications, including high-temperature, high-power, and high-frequency and optoelectronic devices, a structural component in fusion reactors, cladding material for gas-cooled fission reactors, and an inert matrix for the transmutation of Pu. Different poly-types of SiC such as 3C, 6H, and 4H have been used widely. Ion implantation is a critical technique to selectively introduce dopants for the production of Si-based devices, to fabricate p-type and n-type SiC wafers.

The ingot is then sliced to form silicon carbide SiC wafers.

Silicon Carbide Material Properties

Different types of SiC wafers

There are three types: n-type sic wafer, p-type sic wafer and high purity semi-insulating sic wafer. Doping refers to ion implantation that introduces impurities to a silicon crystal. These dopants allow the crystal’s atoms to form ionic bonds, making the once intrinsic crystal extrinsic. This process introduces two types of impurities; N-type and P-type. The ‘type’ it becomes depends on the materials used to create the chemical reaction. The difference between N-type and P-type SiC wafer is the primary material used to create the chemical reaction during doping. Depending on the material used, the outer orbital will have either five or three electrons making one negatively charged (N-type) and one positively charged (P-type).

N-type SiC wafers are mainly used in new energy vehicles, high-voltage transmission and substation, white goods, high-speed trains, motors, photovoltaic inverters, pulse power supplies, etc. They have the advantages of reducing equipment energy loss, improving equipment reliability, reducing equipment size and improving equipment performance, and have irreplaceable advantages in making power electronic devices.

The high purity semi-insulating SiC wafer is mainly used as the substrate of high power RF devices.

Epitaxy - III-V Nitride Deposition

SiC, GaN, AlxGa1-xN and InyGa1-yN epitaxial layers on SiC substrate or sapphire substrate.