English
Home > Products
  • Veeco Propel

    • China Veeco Propel Manufacturers, Suppliers, Factory

    Semicorex has been producing Veeco Propel for many years and is one of the professional Veeco Propel manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

    Related Products

    Hot Products

    • Silicon Pedestal

      Silicon Pedestal

      Semicorex Silicon Pedestal, a often overlooked yet critically important component, plays a vital role in achieving precise and repeatable results in semiconductor diffusion and oxidation processes. The specialized platform, upon which silicon boats rest within high-temperature furnaces, offers unique advantages that directly contribute to enhanced temperature uniformity, improved wafer quality, and ultimately, superior semiconductor device performance.**
    • SiC Coated Barrel Susceptor for Wafer Epitaxial

      SiC Coated Barrel Susceptor for Wafer Epitaxial

      The Semicorex SiC Coated Barrel Susceptor for Wafer Epitaxial is the perfect choice for single crystal growth applications, thanks to its exceptionally flat surface and high-quality SiC coating. Its high melting point, oxidation resistance, and corrosion resistance make it an ideal choice for use in high-temperature and corrosive environments.
    • CVD SiC Coated Graphite Shower Head

      CVD SiC Coated Graphite Shower Head

      In a plasma apparatus for etching and chemical vapor deposition (CVD) of materials on wafers, process gases are supplied into a process chamber through a CVD SiC coated graphite shower head. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC MOCVD Inner Segment

      SiC MOCVD Inner Segment

      Semicorex SiC MOCVD Inner Segment is an essential consumable for metal-organic chemical vapor deposition (MOCVD) systems used in the production of silicon carbide (SiC) epitaxial wafers. It's precisely designed to withstand the demanding conditions of SiC epitaxy, ensuring optimal process performance and high-quality SiC epilayers.**
    • Tantalum Carbide Coated Porous Graphite

      Tantalum Carbide Coated Porous Graphite

      Semicorex Tantalum Carbide Coated Porous Graphite is the latest innovation in Silicon Carbide (SiC) crystal growth technology. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate

      4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate

      Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafer substrates for many years. Our 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • How is Silicon Carbide Manufactured?

    • Dislocation in SiC crystals

      SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

    • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

      In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

    • Thin film growth process

      Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

    • Research Progress of TaC Coatings on Carbon-Based Material Surfaces

      Carbon-based materials such as graphite, carbon fibers, and carbon/carbon (C/C) composites are known for their high specific strength, high specific modulus, and excellent thermal properties, making them suitable for a wide range of high-temperature applications. These materials are widely utilized in aerospace, chemical engineering, and energy storage. However, their susceptibility to oxidation and corrosion in high-temperature environments, along with poor scratch resistance, restricts their further application.

    • What is SiC epitaxy?

      Silicon Carbide (SiC) epitaxy is a key technology in the field of semiconductors, particularly for the development of high-power electronic devices. SiC is a compound semiconductor with a wide bandgap, which makes it ideal for applications that require a high-temperature and high-voltage operation.

    Send Inquiry

    Hit enter to search or ESC to close
    X
    We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
    Reject Accept