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    • China SiC spare part Manufacturers, Suppliers, Factory

    Semicorex has been producing SiC spare part for many years and is one of the professional SiC spare part manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • PBN Heaters

      PBN Heaters

      Semicorex PBN Heaters boast a sophisticated triple-layered design engineered to redefine performance benchmarks. At its core lies a foundation crafted from high-purity pyrolytic boron nitride (PBN), renowned for its exceptional thermal conductivity and robust structural integrity. we look forward to becoming your long-term partner in China.
    • SiC Coated Graphite Susceptor for MOCVD

      SiC Coated Graphite Susceptor for MOCVD

      Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC Coated Graphite Susceptor for MOCVD has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
    • Fused Quartz Tube

      Fused Quartz Tube

      Semicorex premium Fused Quartz Tube, meticulously crafted from semiconductor-grade quartz to meet the exacting standards of modern semiconductor processing. Engineered for precision and reliability, this high-performance quartz tube is an indispensable component in the semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Quartz Diffusion Boat

      Quartz Diffusion Boat

      Semicorex Quartz Diffusion Boat, also referred to as quartz carrier or quartz wafer boat, is specifically designed to hold semiconductor wafers during critical processes such as chemical vapor deposition (CVD), thermal oxidation, and annealing.**
    • Plate for Epitaxial Growth

      Plate for Epitaxial Growth

      The Semicorex Plate for Epitaxial Growth stands as a critical element specifically designed to cater to the intricacies of epitaxial processes. Customizable to meet distinct specifications and preferences, our offering delivers an individually tailored solution that seamlessly fits your unique operational needs. We offer a range of customization options, from size alterations to variations in the coating application, equipping us to engineer and supply a product capable of enhancing performance across various application scenarios. We at Semicorex are dedicated to manufacturing and supplying high-performance Plates for Epitaxial Growth that fuse quality with cost-efficiency.
    • Electrostatic Chuck

      Electrostatic Chuck

      Semicorex Electrostatic Chuck (ESC) is an advanced component used in semiconductor manufacturing, designed to securely hold semiconductor wafers during various processing stages. With our commitment to delivering top-quality products at competitive prices, we are poised to be your long-term partner in China.*
    • Related Blog
    • Reviews

    • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

      Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

    • SiC Ceramics: The Indispensable Material for High-Precision Components in Semiconductor Manufacturing

      Semiconductor manufacturing, the cornerstone of modern technological advancement, is in constant pursuit of smaller, faster, and more efficient integrated circuits. This relentless pursuit drives the need for increasingly precise and sophisticated manufacturing processes, where each step relies heavily on high-performance, high-quality, and high-precision equipment. Silicon carbide (SiC), a high-performance structural ceramic material, plays a crucial role in this demanding environment.

    • The significance of porous graphite materials to SiC crystal growth

      Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

    • Application Scenarios for Epitaxial Layers

      We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

    • Silicon Carbide Substrate Core Process Flow

      Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

    • What is the process of isostatic graphite manufacturing?

      The process of isostatic graphite manufacturing is Selecting raw materials, Blending, Molding, Isostatic pressing, Carbonization, Graphitization. 

    Related Search

    SiC ceramic;high purity SiC;Silicon carbide;SiC spare part;silicon carbide ceramic;RBSiC;SSiC;RSiC;wafer processing;SiC for semiconductor

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