English
Home > Products > Epitaxial Barrel Reactors

China Epitaxial Barrel Reactors Manufacturers, Suppliers, Factory

Our advancement depends over the superior machines, exceptional talents and continually strengthened technology forces for Epitaxial Barrel Reactors,SiC Coated Barrel,Coated Barrel Susceptor,SiC Coated Barrel Susceptor,Barrel Susceptors, We welcome new and aged shoppers from all walks of daily life to call us for long term business associations and mutual accomplishment!
Epitaxial Barrel Reactors, With good quality, reasonable price and sincere service, we enjoy a good reputation. Items are exported to South America, Australia, Southeast Asia and so on. Warmly welcome customers at home and abroad to cooperate with us for the brilliant future.

Related Products

Hot Products

  • SiC Process Tube

    SiC Process Tube

    SiC Process Tube is a tube shape reactor in heat treatment for wafer processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Carbide Cantilever Paddle

    Silicon Carbide Cantilever Paddle

    Semicorex silicon carbide cantilever paddle is a specialized component used in furnaces for various thermal processing applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Seal Ring

    SiC Seal Ring

    Semicorex provide high-quality SiC seal ring with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Susceptor Semiconductor

    Susceptor Semiconductor

    Semicorex Susceptor Semiconductor, a revolutionary graphite susceptor meticulously crafted to elevate your semiconductor manufacturing to new heights. Engineered with precision and innovation, this susceptor boasts a CVD SiC coating that sets it apart in the industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Reflector

    SiC Reflector

    Semicorex SiC reflector is a pivotal element in various semiconductor manufacturing processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • PSS Handling Carrier for Wafer Transfer

    PSS Handling Carrier for Wafer Transfer

    Semicorex's PSS Handling Carrier for Wafer Transfer is engineered for the most demanding epitaxy equipment applications. Our ultra-pure graphite carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The SiC coated carrier has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Korean memory chips plummeted

  • What is Thermal Annealing

    The annealing process, also known as Thermal Annealing, is a crucial step in semiconductor manufacturing.

  • What is porous graphite?

    Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

  • The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

    4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

  • Method for preparing SiC powder

    Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept