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    Barrel Structure for Semiconductor Epitaxial Reactor

    With its exceptional thermal conductivity and heat distribution properties, the Semicorex Barrel Structure for Semiconductor Epitaxial Reactor is the perfect choice for use in LPE processes and other semiconductor manufacturing applications. Its high-purity SiC coating provides superior protection in high-temperature and corrosive environments.
  • ICP Plasma Etching System for PSS Process

    ICP Plasma Etching System for PSS Process

    Choose Semicorex's ICP Plasma Etching System for PSS Process for high-quality epitaxy and MOCVD processes. Our product is engineered specifically for these processes, offering superior heat and corrosion resistance. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • Second Half Parts for Lower Baffles in Epitaxial Process

    Second Half Parts for Lower Baffles in Epitaxial Process

    Semicorex Second Half Parts for Lower Baffles in Epitaxial Process, meticulously engineered components designed to revolutionize the performance of your semiconductor devices. Specifically tailored for the intake system of LPE reactors, these semi-cylindrical fittings play a pivotal role in enhancing the epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Susceptor for ICP Etch

    SiC Susceptor for ICP Etch

    Semicorex SiC Susceptor for ICP Etch is manufactured with a focus on maintaining high standards of quality and consistency. The robust manufacturing processes used to create these susceptors ensure that each batch meets stringent performance criteria, delivering reliable and consistent results in semiconductor etching. Additionally, Semicorex is equipped to offer fast delivery schedules, which is crucial for keeping pace with the rapid turnaround demands of the semiconductor industry, ensuring that production timelines are met without compromising on quality.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Susceptor for ICP Etch that fuse quality with cost-efficiency.**
  • MOCVD Epitaxy Susceptor

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    Chemical Vapor Deposition (CVD) refers to a process technology where multiple gaseous reactants at varied partial pressures undergo a chemical reaction under specific temperature and pressure conditions. The resulting solid substance deposits on the surface of the substrate material, thereby obtaining the desired thin film. In traditional integrated circuit manufacturing processes, the obtained thin film materials are generally compounds such as oxides, nitrides, carbides, or materials like polycrystalline silicon, amorphous silicon, etc.

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