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Final polishing of the silicon wafer surface

To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

The Fatal Flaw of GaN

As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN h......

Surface Polishing of Silicon Wafers

Silicon wafer surface polishing is a crucial process in semiconductor manufacturing. Its primary goal is to achieve extremely high standards of surface flatness and roughness by removing micro-defects, layers of stress damage, and contamination from impurities such as metal ions.

Crystal Orientation and Defects in Silicon Wafers

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Final polishing of the silicon wafer surface

The Fatal Flaw of GaN

Surface Polishing of Silicon Wafers

Crystal Orientation and Defects in Silicon Wafers

SiC Single Crystal Substrate Processing

Introducing Silicon Material