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4th Generation Semiconductors Gallium Oxide/β-Ga2O3

The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor hig......

Defect-Free Epitaxial Growth and Misfit Dislocations

Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate ......

Oxidation Process

The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form a......

Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This mak......

How to do CMP Process

In the process of silicon wafer manufacturing, after the crystal rod is cut into silicon wafers, it will need to be polished and cleaned to obtain a single crystal silicon wafer like a mirror.

What is CMP Process

In semiconductor manufacturing, atomic-level flatness is usually used to describe the global flatness of the wafer, with the unit of nanometers (nm).

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