Mechanical Grade Gallium Arsenide (GaAs) Semi-insulating Wafer at WMC

Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of silicon carbide products for many years. Our double-polished 6 Inch Semi-Insulating HPSI SiC Wafer has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Our personnel are generally in the spirit of "continuous improvement and excellence", and together with the outstanding top quality merchandise, favorable price tag and fantastic after-sales solutions, we try to gain every single customer's rely on for Mechanical Grade Gallium Arsenide (GaAs) Semi-insulating Wafer at WMC, Warmly welcome to cooperate and develop with us! we will continue to provide product with high quality and competitive price. Mechanical Grade Gallium Arsenide (GaAs) Semi-insulating Wafer at WMC Gallium Arsenide Substrate, Gallium Arsenic Wafer, GaAs Mechanical Substrate, We have been seeking the chances to meet all the friends from both at home and abroad for the win-win cooperation. We sincerely hope to have long-term cooperation with all of you on the bases of mutual benefit and common development.

Semicorex has a complete silicon carbide(SiC) wafer products line, including 4H and 6H substrates with N-type, P-type and high purity semi-insulating wafers, they can be with or without epitaxy.

The 6 inch diameter of our Mechanical Grade Gallium Arsenide (GaAs) Semi-insulating Wafer at WMC provides a large surface area for manufacturing power electronic devices such as MOSFETs, Schottky diodes, and other high-voltage applications. Mechanical Grade Gallium Arsenide (GaAs) Semi-insulating Wafer at WMC is mainly used in 5G communications, radar systems, guidance heads, satellite communications, warplanes and other fields, with the advantages of enhancing the RF range, ultra-long-range identification, anti-jamming and high-speed, high-capacity information transfer applications, is considered the most ideal substrate for making microwave power devices.

Specifications:

● Diameter: 6″

●Double-polished

● Grade: Production, Research, Dummy

● 4H-SiC HPSI Wafer

● Thickness: 500±25 μm

● Micropipe Density: ≤1 ea/cm² ~ ≤15 ea/cm²

Items	Production	Research	Dummy
Crystal Parameters
Polytype	4H
Surface orientation on-axis	<0001 >
Surface orientation off-axis	0±0.2°
(0004)FWHM	≤45arcsec	≤60arcsec	≤1OOarcsec
Electrical Parameters
Type	HPSI
Resistivity	≥1 E8ohm·cm	100% area > 1 E5ohm·cm	70% area > 1 E5ohm·cm
Mechanical Parameters
Diameter	150±0.2 mm
Thickness	500±25 μm
Primary flat orientation	[1-100]±5° or Notch
Primary flat length/depth	47.5±1.5mm or 1 - 1.25mm
TTV	≤5 μm	≤10 μm	≤15 μm
LTV	≤3 μm(5mm*5mm)	≤5 μm(5mm*5mm)	≤10 μm(5mm*5mm)
Bow	-15μm ~ 15μm	-35μm ~ 35μm	-45μm ~ 45μm
Warp	≤35 μm	≤45 μm	≤55 μm
Front(Si-face) roughness(AFM)	Ra≤0.2nm (5μm*5μm)
Structure
Micropipe density	≤1 ea/cm²	≤10 ea/cm²	≤15 ea/cm²
Carbon inclusion density	≤1 ea/cm²	NA
Hexagonal void	None	NA
Metal impurities	≤5E12atoms/cm²		NA
Front Quality
Front	Si
Surface finish	Si-face CMP
Particles	≤60ea/wafer (size≥0.3μm)	NA
Scratches	≤5ea/mm. Cumulative length ≤Diameter	Cumulative length≤300mm	NA
Orange peel/pits/stains/striations/ cracks/contamination	None		NA
Edge chips/indents/fracture/hex plates	None
Polytype areas	None	Cumulative area≤20%	Cumulative area≤30%
Front laser marking	None
Back Quality
Back finish	C-face CMP
Scratches	≤5ea/mm,Cumulative length≤2*Diameter	NA
Back defects (edge chips/indents)	None
Back roughness	Ra≤0.2nm (5μm*5μm)
Back laser marking	"SEMI"
Edge
Edge	Chamfer
Packaging
Packaging	Epi-ready with vacuum packaging Multi-wafer cassette packaging
*Notes： "NA" means no request Items not mentioned may refer to SEMI-STD.

Hot Tags: Gallium Arsenide Substrate, Gallium Arsenic Wafer, GaAs Mechanical Substrate

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