Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our RTP RTA SiC Coated Carrier has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
Semicorex supplies Industrial Silicon Carbide Cantilever Paddle Ceramic Sic Boat Holder SiC wafer carrier used to support wafers, which is really stable for RTA, RTP or harsh chemical cleaning.
Industrial Silicon Carbide Cantilever Paddle Ceramic Sic Boat Holder SiC wafer carrier with high-purity silicon carbide (SiC) coated graphite construction provides superior heat resistance, even thermal uniformity for consistent epi layer thickness and resistance, and durable chemical resistance. Fine SiC crystal coating provides a clean, smooth surface, critical for handling since pristine wafers contact the susceptor at many points across their entire area.
At Semicorex, we focus on providing high-quality, cost-effective Industrial Silicon Carbide Cantilever Paddle Ceramic Sic Boat Holder SiC wafer carrier, we prioritize customer satisfaction and provide cost-effective solutions. We look forward to becoming your long-term partner, delivering high-quality products and exceptional customer service.
Parameters of Industrial Silicon Carbide Cantilever Paddle Ceramic Sic Boat Holder SiC wafer carrier
Main Specifications of CVD-SIC Coating |
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SiC-CVD Properties |
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Crystal Structure |
FCC β phase |
|
Density |
g/cm ³ |
3.21 |
Hardness |
Vickers hardness |
2500 |
Grain Size |
μm |
2~10 |
Chemical Purity |
% |
99.99995 |
Heat Capacity |
J·kg-1 ·K-1 |
640 |
Sublimation Temperature |
℃ |
2700 |
Felexural Strength |
MPa (RT 4-point) |
415 |
Young’ s Modulus |
Gpa (4pt bend, 1300℃) |
430 |
Thermal Expansion (C.T.E) |
10-6K-1 |
4.5 |
Thermal conductivity |
(W/mK) |
300 |
Features of Industrial Silicon Carbide Cantilever Paddle Ceramic Sic Boat Holder SiC wafer carrier
- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.
- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.
- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.
- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
- High melting point, high temperature oxidation resistance, corrosion resistance.