GaN LED Epitaxial Wafer Susceptors Pss Sapphire Substrate

Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We have been manufacturer and supplier of Deep-UV LED Epitaxial Susceptor for many years. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.

Send Inquiry

Product Description

We insist over the principle of enhancement of 'High high quality, Efficiency, Sincerity and Down-to-earth working approach' to offer you with superb assistance of processing for GaN LED Epitaxial Wafer Susceptors Pss Sapphire Substrate, We have exported to more than 40 countries and regions, which have gained fantastic popularity from our costumers everywhere in the globe. GaN LED Epitaxial Wafer Susceptors Pss Sapphire Substrate GaN LED Wafer Manufacturer, Sapphire GaN LED Supplier, LED Epi Wafer Manufacturer, We look forward to hearing from you, whether you are a returning customer or a new one. We hope you will find what you are looking for here, if not, please contact us immediately. We pride ourselves on top notch customer service and response. Thank you for your business and support!

GaN LED Epitaxial Wafer Susceptors Pss Sapphire Substrates are essential for the fabrication of LED. Semicorex silicon carbide (SiC)-coated plate make the manufacture of high quality deep UV LED wafers more efficient. SiC Coating is a dense, wear-resistant silicon carbide (SiC) coating. It has high corrosion and heat resistance properties as well as excellent thermal conductivity. We apply SiC in thin layers onto the graphite using the chemical vapor deposition (CVD) process.
No matter what your specific requirements might be, we will identify the best solution for MOCVD epitaxy as well as the semiconductor and LED industries.
Our GaN LED Epitaxial Wafer Susceptors Pss Sapphire Substrate is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.
Contact us today to learn more about our GaN LED Epitaxial Wafer Susceptors Pss Sapphire Substrate.

Parameters of GaN LED Epitaxial Wafer Susceptors Pss Sapphire Substrate

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of GaN LED Epitaxial Wafer Susceptors Pss Sapphire Substrate

- Lower wavelength deviation and higher chip yields
- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
- Tighter dimensional tolerances lead to higher product yield and lower costs
- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.

Hot Tags: GaN LED Wafer Manufacturer, Sapphire GaN LED Supplier, LED Epi Wafer Manufacturer, Deep-UV LED Epitaxial Susceptor

Send Inquiry

Please Feel free to give your inquiry in the form below. We will reply you in 24 hours.