GaN LED Epitaxial Wafer Pss Sapphire Substrate

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Product Description

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Our GaN LED Epitaxial Wafer Pss Sapphire Substrate are made by CVD chemical vapor deposition under high-temperature chlorination conditions, ensuring high purity. The product's surface is dense, with fine particles and high hardness, making it corrosion-resistant to acid, alkali, salt, and organic reagents.
Our product is designed to achieve the best laminar gas flow pattern, guaranteeing the evenness of thermal profile. Our GaN LED Epitaxial Wafer Pss Sapphire Substrate prevent any contamination or impurity diffusion during the epitaxial growth process, ensuring high-quality results.
At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our GaN LED Epitaxial Wafer Pss Sapphire Substrate have a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.

Parameters of GaN LED Epitaxial Wafer Pss Sapphire Substrate

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Parameters of GaN LED Epitaxial Wafer Pss Sapphire Substrate

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion

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