Deep UV LED 265nm Light Source UVC Lamp semiconductor wafer

Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We have been manufacturer and supplier of Deep-UV LED Epitaxial Susceptor for many years. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

We are commitment to offer the competitive price ,outstanding products quality, as well as fast delivery for Deep UV LED 265nm Light Source UVC Lamp semiconductor wafer, On account of superior top quality and aggressive selling price , we'll be the market leader, be sure to don’t wait to get in touch with us by phone or email, should you be intrigued in almost any of our products. Deep UV LED 265nm Light Source UVC Lamp, Deep UV, High Power UV LED 265nm, semiconductor wafer, We have been introduced as a one of the growing manufacture supplier and export of our solutions. We have now a team of dedicated trained specialist who take care the quality and timely supply. If you are looking for Good Quality at a good price and timely delivery. Do contact us.

Deep UV LED 265nm Light Source UVC Lamp semiconductor wafers are essential for the fabrication of LED. Semicorex silicon carbide (SiC)-coated plate make the manufacture of high quality deep UV LED wafers more efficient. SiC Coating is a dense, wear-resistant silicon carbide (SiC) coating. It has high corrosion and heat resistance properties as well as excellent thermal conductivity. We apply SiC in thin layers onto the graphite using the chemical vapor deposition (CVD) process.
No matter what your specific requirements might be, we will identify the best solution for MOCVD epitaxy as well as the semiconductor and LED industries.
Our Deep UV LED 265nm Light Source UVC Lamp semiconductor wafer is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.
Contact us today to learn more about our Deep UV LED 265nm Light Source UVC Lamp semiconductor wafer.

Parameters of Deep UV LED 265nm Light Source UVC Lamp semiconductor wafer

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of Deep UV LED 265nm Light Source UVC Lamp semiconductor wafer

- Lower wavelength deviation and higher chip yields
- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
- Tighter dimensional tolerances lead to higher product yield and lower costs
- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.

Hot Tags: UVC Lamp, Deep UV, High Power UV LED 265nm, semiconductor wafer

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