Industry News - Semicorex Advanced Material Technology Co.,Ltd

SiC Epitaxy

There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's perf......

Dry Etching vs Wet Etching

In semiconductor fabrication, etching is one of the major steps, along with photolithography and thin-film deposition. It involves removing unwanted materials from the surface of a wafer using chemical or physical methods. This step is carried out after coating, photolithography, and developing. It ......

Dislocation in SiC crystals

SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

About defects in SiC crystals - Micropipe

SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocatio......

Why choose liquid phase epitaxy method?

Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

What is liquid phase epitaxy?

The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.